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首页>HGTP5N120BND>详情
HGTP5N120BND_ON/安森美_IGBT 晶体管 21a 1200V IGBT NPT Series N-Ch威尔健半导体
- 详细信息
- 规格书下载
产品属性
- 类型
描述
- 型号:
HGTP5N120BND
- 功能描述:
IGBT 晶体管 21a 1200V IGBT NPT Series N-Ch
- RoHS:
否
- 制造商:
Fairchild Semiconductor
- 配置:
集电极—发射极最大电压
- VCEO:
650 V
- 集电极—射极饱和电压:
2.3 V
- 栅极/发射极最大电压:
20 V 在25
- C的连续集电极电流:
150 A
- 栅极—射极漏泄电流:
400 nA
- 功率耗散:
187 W
- 封装/箱体:
TO-247
- 封装:
Tube
供应商
- 企业:
深圳市威尔健半导体有限公司
- 商铺:
- 联系人:
方经理
- 手机:
17302670410
- 询价:
- 电话:
0755-83383789
- 地址:
深圳市福田区华强北路1019号华强广场A栋17e
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