HGTH20N40E1D中文资料Intersil数据手册PDF规格书

描述 Description

The HGTH20N40C1D, HGTH20N40E1D, HGTH20N50C1D, and HGTH20N50E1D are n-channel enhancement-mode insulated gate bipolar transistors (IGBTs) designed for high voltage, low on-dissipation applications such as switching regulators and motor drivers. They feature a discrete antiparallel diode that shunts current around the IGBT in the reverse direction without introducing carriers into the depletion region. These types can be operated directly from low power integrated circuits.

特性 Features

• 20A, 400V and 500V

• VCE(ON) 2.5V Max.

• TFALL 1µs, 0.5µs

• Low On-State Voltage

• Fast Switching Speeds

• High Input Impedance

• Anti-Parallel Diode

Applications

• Power Supplies

• Motor Drives

• Protective Circuits