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首页>HGTD7N60C3S>详情
HGTD7N60C3S 分立半导体产品晶体管 - UGBT、MOSFET - 单 HARRIS
- 详细信息
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产品参考属性
- 类型
描述
- 产品编号:
HGTD7N60C3S9A
- 制造商:
onsemi
- 类别:
- 包装:
管件
- 不同 Vge、Ic 时 Vce(on)(最大值):
2V @ 15V,7A
- 开关能量:
165µJ(开),600µJ(关)
- 输入类型:
标准
- 工作温度:
-40°C ~ 150°C(TJ)
- 安装类型:
表面贴装型
- 封装/外壳:
TO-252-3,DPak(2 引线 + 接片),SC-63
- 供应商器件封装:
TO-252AA
- 描述:
IGBT 600V 14A TO252AA
供应商
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