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HGTD2N120BNS

12A, 1200V, NPT Series N-Channel IGBT

TheHGTP2N120BN,HGTD2N120BNS,andHGT1S2N120BNSareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelow

Intersil

Intersil Corporation

HGTD2N120CNS

13A,1200V,NPTSeriesN-ChannelIGBT

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

HGTD2N120CNS

13A,1200V,NPTSeriesN-ChannelIGBT

TheHGTD2N120CNS,HGTP2N120CN,andHGT1S2N120CNSareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelow

Intersil

Intersil Corporation

HGTP2N120BN

12A,1200V,NPTSeriesN-ChannelIGBT

TheHGTP2N120BN,HGTD2N120BNS,andHGT1S2N120BNSareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelow

Intersil

Intersil Corporation

HGTP2N120BND

12A,1200V,NPTSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode

TheHGTP2N120BNDandHGT1S2N120BNDSareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-statecond

Intersil

Intersil Corporation

HGTP2N120CN

13A,1200V,NPTSeriesN-ChannelIGBT

TheHGTD2N120CNS,HGTP2N120CN,andHGT1S2N120CNSareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelow

Intersil

Intersil Corporation

HGTP2N120CN

13A,1200V,NPTSeriesN-ChannelIGBT

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

HGTP2N120CND

13A,1200V,NPTSeriesN-ChannelIGBTswithAnti-ParallelHyperfastDiodes

TheHGTP2N120CNDandHGT1S2N120CNDSareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-statecond

Intersil

Intersil Corporation

HGTP2N120CNS

13A,1200V,NPTSeriesN-ChannelIGBT

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

IXGY2N120

HighVoltageIGBT

IXYS

IXYS Corporation

详细参数

  • 型号:

    HGTD2N120BNS

  • 制造商:

    INTERSIL

  • 制造商全称:

    Intersil Corporation

  • 功能描述:

    12A, 1200V, NPT Series N-Channel IGBT

供应商型号品牌批号封装库存备注价格
Intersil
24+
TO-252TO-251
8866
询价
INTERSIL
22+
TO-252TO-251
6000
十年配单,只做原装
询价
INTERSIL
23+
TO-252TO-251
6000
原装正品,支持实单
询价
INTERSIL
23+
TO-252TO-251
8400
专注配单,只做原装进口现货
询价
INTERSIL
23+
TO-252TO-251
8400
专注配单,只做原装进口现货
询价
INTERSIL
25+
TO-252TO-251
12300
独立分销商 公司只做原装 诚心经营 免费试样正品保证
询价
FAIRCHILD
05+
原厂原装
6070
只做全新原装真实现货供应
询价
FAIRCHILD
23+
NA
19960
只做进口原装,终端工厂免费送样
询价
FAIRCHILD
2023+
SMD
1705
安罗世纪电子只做原装正品货
询价
INTERSIL
12+
TO-252
15000
全新原装,绝对正品,公司现货供应。
询价
更多HGTD2N120BNS供应商 更新时间2025-6-6 16:30:00