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HGT1S12N60B3DS

27A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode

This family of MOS gated high voltage switching devices combine the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately be

文件:117.6 Kbytes 页数:7 Pages

Intersil

HGT1S12N60B3S

27A, 600V, UFS Series N-Channel IGBTs

The HGTP12N60B3 and HGT1S12N60B3S are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop

文件:112.91 Kbytes 页数:7 Pages

Intersil

HGT1S12N60B3DS

27A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode

Renesas

瑞萨

HGT1S12N60B3S

27A, 600V, UFS Series N-Channel IGBTs

Renesas

瑞萨

详细参数

  • 型号:

    HGT1S12N60B3

  • 制造商:

    Rochester Electronics LLC

  • 功能描述:

    - Bulk

  • 制造商:

    Harris Corporation

供应商型号品牌批号封装库存备注价格
HARRIS/哈里斯
25+
TO-263
32360
HARRIS/哈里斯全新特价HGT1S12N60B3S即刻询购立享优惠#长期有货
询价
HARRIS/哈里斯
2450+
TO-263
9850
只做原装正品现货或订货假一赔十!
询价
Intersil
24+
TO-263
8866
询价
INTERSIL
05+
原厂原装
6852
只做全新原装真实现货供应
询价
HAR
23+
TO-263
9000
原装正品假一罚百!可开增票!
询价
HAR
23+
TO-263
50000
全新原装正品现货,支持订货
询价
INTERSIL
22+
TO-263
6000
十年配单,只做原装
询价
INTERSIL
23+
10000
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
HAR
2023+
TO-263
1400
十五年行业诚信经营,专注全新正品
询价
HAR
23+
TO-263
9000
十七年VIP会员,诚信经营,一手货源,原装正品可零售!
询价
更多HGT1S12N60B3供应商 更新时间2025-11-18 9:05:00