| 订购数量 | 价格 |
|---|---|
| 1+ |
- 厂家型号：
HGT1S12N60A4DS
- 产品分类：
IC芯片
- 生产厂商：
- 库存数量：
7350
- 产品封装：
TO263
- 生产批号：
24+
- 库存类型：
- 更新时间：
2025-11-18 10:08:00
首页>HGT1S12N60A4DS>详情
HGT1S12N60A4DS_ONSEMI/安森美半导体_IGBT 晶体管 12A 600V N-Ch高捷芯城商城
- 详细信息
- 规格书下载
产品属性
- 类型
描述
- 型号：
HGT1S12N60A4DS
- 功能描述：
IGBT 晶体管 12A 600V N-Ch
- RoHS：
否
- 制造商：
Fairchild Semiconductor
- 配置：
集电极—发射极最大电压
- VCEO：
650 V
- 集电极—射极饱和电压：
2.3 V
- 栅极/发射极最大电压：
20 V 在25
- C的连续集电极电流：
150 A
- 栅极—射极漏泄电流：
400 nA
- 功率耗散：
187 W
- 封装/箱体：
TO-247
- 封装：
Tube
供应商
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