首页 >HG25Q16M/TR>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
3V4M-BITSERIALNORFLASHWITHDUALANDQUADSPI | HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 华之美半导体深圳市华之美半导体有限公司 | HMSEMI | ||
3V4M-BITSERIALNORFLASHWITHDUALANDQUADSPI | HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 华之美半导体深圳市华之美半导体有限公司 | HMSEMI | ||
3V4M-BITSERIALNORFLASHWITHDUALANDQUADSPI | HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 华之美半导体深圳市华之美半导体有限公司 | HMSEMI | ||
UltraLowPower,16M-bit 2Description The P25Q16LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyofhighvolume consumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryintoembeddedor externalRAMforexecution.Theflexibleerasearchitectureofthedevice,with | PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉股份普冉半导体(上海)股份有限公司 | PUYA | ||
UltraLowPower,16M-bit 2Description The P25Q16LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyofhighvolume consumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryintoembeddedor externalRAMforexecution.Theflexibleerasearchitectureofthedevice,with | PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉股份普冉半导体(上海)股份有限公司 | PUYA | ||
UltraLowPower,16M-bit 2Description The P25Q16LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyofhighvolume consumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryintoembeddedor externalRAMforexecution.Theflexibleerasearchitectureofthedevice,with | PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉股份普冉半导体(上海)股份有限公司 | PUYA | ||
UltraLowPower,16M-bit 2Description The P25Q16LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyofhighvolume consumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryintoembeddedor externalRAMforexecution.Theflexibleerasearchitectureofthedevice,with | PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉股份普冉半导体(上海)股份有限公司 | PUYA | ||
UltraLowPower,16M-bit 2Description The P25Q16LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyofhighvolume consumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryintoembeddedor externalRAMforexecution.Theflexibleerasearchitectureofthedevice,with | PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉股份普冉半导体(上海)股份有限公司 | PUYA | ||
UltraLowPower,16M-bit 2Description The P25Q16LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyofhighvolume consumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryintoembeddedor externalRAMforexecution.Theflexibleerasearchitectureofthedevice,with | PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉股份普冉半导体(上海)股份有限公司 | PUYA | ||
UltraLowPower,16M-bit 2Description The P25Q16LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyofhighvolume consumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryintoembeddedor externalRAMforexecution.Theflexibleerasearchitectureofthedevice,with | PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉股份普冉半导体(上海)股份有限公司 | PUYA |
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