中低压MOS（20-150V）

HXC-Power

惠海半导体

OUTLINE 2 WAY

文件：66.43 Kbytes 页数：1 Pages

IPP

N-Channel MOSFET

DESCRIPTION ·Drain Current -ID= 41A@ TC=25℃ ·Drain Source Voltage -VDSS= 1000V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.21Ω(Max)@VGS= 10V APPLICATIONS ·DC-DC converter ·Battery Chargers ·High speed power switch

文件：593.57 Kbytes 页数：3 Pages

ISC

无锡固电

EPITAXIAL PLANAR PNP TRANSISTOR (INDUSTRIAL USE, GENERAL PURPOSE)

INDUSTRIAL USE. GENERAL PURPOSE APPLICATION. FEATURES • Low Collector Saturation Voltage : VCE(sat)=-1.0V(Max.) at IC=-2A, IB=-0.2A. • Complementary to KTC2026.

文件：338.26 Kbytes 页数：2 Pages

KEC

KEC(Korea Electronics)