N 500V 5A MOS TO-252

The Power MOSFET is fabricated using the advanced planar VDMOS technology. The resulting\ndevice has low conduction resistance,superior switching performance and high avalanche energy. • Low RDS(on)\n• Low gate charge (typ. Qg =13.2nC)\n• 100% UIS tested\n• RoHS complian;

HeifengTech

黑锋科技

500V N-Channel MOSFET

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N-Channel MOSFET uses advanced trench technology

文件：1.32894 Mbytes 页数：5 Pages

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杜因特

Superior Avalanche Rugged Technology

文件：271.14 Kbytes 页数：8 Pages

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N 500V MOS TO-252

The Power MOSFET is fabricated using the advanced planar VDMOS technology. The resulting device has low conduction resistance,superior switching performance and high avalanche energy Low RDS(on)\nLow gate charge (typ. Qg =8.0nC)\n100% UIS tested\nRoHS compliant;

HeifengTech

黑锋科技

MOSFET

SemiHow