首页 >HFBR-1404Z>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
HFBR-1404Z | Low-Cost, 820 nm Miniature Link Fiber Optic Components with ST, SMA, SC, and FC Ports Features RoHScompliant Low-costtransmittersandreceivers ChoiceofST,SMA,SC,orFCports 820nmwavelengthtechnology Signalratesupto160MBaud Linkdistancesuptoseveralkilometers Compatiblewith50/125μm,62.5/125μm,100/140μm,and200μmPlastic-CladSilica( | BOARDCOMBroadcom Corporation. 博通公司博通半导体 | BOARDCOM | |
HFBR-1404Z | Low-Cost, 820 nm Miniature Link Fiber Optic Components with ST짰, SMA, SC and FC Ports | AVAGOAVAGO TECHNOLOGIES LIMITED 安华高 | AVAGO | |
HFBR-1404Z | RoHS Compliant | AVAGOAVAGO TECHNOLOGIES LIMITED 安华高 | AVAGO | |
HFBR-1404Z | 包装：散装 类别：光电器件 光纤 - 发射器 - 分立元件 描述：XMITTER FIBER OPTIC HIGH PWR SMA | Broadcom Limited Broadcom Limited | Broadcom Limited | |
N-ChannelEnhancementModePowerMOSFET DESCRIPTION TheHM1404&usesadvancedtrenchtechnologyanddesigntoprovideexcellentRDS(ON)withlowgatecharge.Itcanbeusedinawidevarietyofapplications. FEATURES ●VDS=40V,ID=170A RDS(ON) | HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 华之美半导体深圳市华之美半导体有限公司 | HMSEMI | ||
N-ChannelEnhancementModePowerMOSFET DESCRIPTION TheHM1404DusesadvancedtrenchtechnologyanddesigntoprovideexcellentRDS(ON)withlowgatecharge.Itcanbeusedinawidevarietyofapplications. FEATURES ●VDS=40V,ID=200A RDS(ON) | HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 华之美半导体深圳市华之美半导体有限公司 | HMSEMI | ||
ReflectiveSensor | HONEYWELL-ACCHoneywell Accelerometers 霍尼韦尔霍尼韦尔国际公司 | HONEYWELL-ACC | ||
N-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-ChannelMOSFETTransistor •DESCRIPTION •Combinewiththefastswitchingspeedandruggedizeddevicedesign,providethedesignerwithanextremelyefficientandreliabledeviceforuseinawidevarietyofapplications. •FEATURES •Staticdrain-sourceon-resistance:RDS(on)≤4.0mΩ •Enhancementmode •FastSwitching | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
PowerMOSFET(Vdss=40V,Rds(on)=0.004ohm,Id=162A?? Description SeventhGenerationHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellkn | IRF International Rectifier | IRF | ||
AdvancedProcessTechnologyUltraLowOn-Resistance Description SeventhGenerationHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellkn | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
iscN-ChannelMosfetTransistor Description SeventhGenerationHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellk | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
PowerMOSFET(Vdss=40V,Rds(on)=0.004ohm,Id=162A?? Description SeventhGenerationHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessing techniquestoachieveextremelylowon-resistancepersiliconarea. lAdvancedProcessTechnology lUltraLowOn-Resistance lDynamicdv/dtRating l175°COperatingTemp | IRF International Rectifier | IRF | ||
UltraLowOn-Resistance Description TheD2PakisasurfacemountpowerpackagecapableofaccommodatingdiesizesuptoHEX-4.Itprovidesthehighestpowercapabilityandthelowestpossibleonresistanceinanyexistingsurfacemountpackage. lAdvancedProcessTechnology lUltraLowOn-Resistance lDynam | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
AUTOMOTIVEMOSFET Description SpecificallydesignedforAutomotiveapplications,thisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowonresistancepersiliconarea. Features AdvancedProcessTechnology UltraLowOn-Resistance 175°COperatingTemperature | IRF International Rectifier | IRF | ||
HEXFET짰PowerMOSFET Description SeventhGenerationHEXFETÆPowerMOSFETsfromInternationalRectifierutilizeadvancedprocessing techniquestoachieveextremelylowon-resistancepersiliconarea. AdvancedProcessTechnology UltraLowOn-Resistance Dynamicdv/dtRating 175°COperatingTemperat | IRF International Rectifier | IRF | ||
HEXFET짰PowerMOSFET Description SeventhGenerationHEXFETÆPowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea. AdvancedProcessTechnology UltraLowOn-Resistance Dynamicdv/dtRating 175°COperatingTemperature | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
AdvancedProcessTechnology | IRF International Rectifier | IRF | ||
HEXFET짰PowerMOSFET Description SeventhGenerationHEXFETPowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellk | IRF International Rectifier | IRF |
产品属性
- 产品编号：
HFBR-1404Z
- 制造商：
Broadcom Limited
- 类别：
光电器件 > 光纤 - 发射器 - 分立元件
- 包装：
散装
- 波长：
820nm
- 电压 - 正向 (Vf)（典型值）：
1.7V
- 连接器类型：
SMA
- 描述：
XMITTER FIBER OPTIC HIGH PWR SMA
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
AVAGO/安华高 |
23+ |
Fiber ZIP |
765 |
原厂直供,支持账期,免费供样,技术支持 |
询价 | ||
AVAGO全系列□ |
23+ |
NA |
25800 |
进口器件安华高优势代理供应正迈科技QQ1304306553支持 |
询价 | ||
AVAGO TECHNO |
24+ |
Fiber ZIP |
241 |
只做原装 有挂有货 假一赔十 |
询价 | ||
AVAGO/安华高 |
23+ |
Fiber ZIP |
11557 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
询价 | ||
Broadcom/Avago |
17+ |
NA |
5000 |
进口原装正品优势供应QQ3171516190 |
询价 | ||
AVAGO/安华高 |
2021+ |
ZIP |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
询价 | ||
BRO |
22+ |
ORIGINAL |
25800 |
原装正品,品质保证,值得你信赖. |
询价 | ||
Avago(安华高) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
询价 | ||
Broadcom |
22+ |
NA |
810 |
加我QQ或微信咨询更多详细信息, |
询价 | ||
BRO |
23+ |
589610 |
新到现货 原厂一手货源 价格秒杀代理! |
询价 |
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