LX5541LL

Co-Package2.3-2.5GHzHBTPowerAmppHEMTLowNoiseAmplifierSPDTSwitch

DESCRIPTION LX5541isaco-packageRFICconsistingofanInGaP/GaAsHeterojunctionBipolarTransistor(HBT)poweramplifier,anInGaAspseudomorphicHEMT(pHEMT)lownoiseamplifier,andaSPDTswitch.AllthreeRFdevicesareoptimizedforWLANapplicationsinthe2.3to2.5GHzfrequencyrang

MAX5541

Low-Cost,5V,Serial-Input,Voltage-Output,16-BitDAC

GeneralDescription TheMAX5541serial-input,voltage-output,16-bitmonotonicdigital-to-analogconverter(DAC)operatesfromasingle+5Vsupply.TheDACoutputisunbuffered,resultinginalow0.3mAsupplycurrentandlow1LSBoffseterror.TheDACoutputrangeis0VtoVREF.TheDAClatchac

MAX5541CSA

Low-Cost,5V,Serial-Input,Voltage-Output,16-BitDAC

GeneralDescription TheMAX5541serial-input,voltage-output,16-bitmonotonicdigital-to-analogconverter(DAC)operatesfromasingle+5Vsupply.TheDACoutputisunbuffered,resultinginalow0.3mAsupplycurrentandlow1LSBoffseterror.TheDACoutputrangeis0VtoVREF.TheDAClatchac

MAX5541ESA

Low-Cost,5V,Serial-Input,Voltage-Output,16-BitDAC

GeneralDescription TheMAX5541serial-input,voltage-output,16-bitmonotonicdigital-to-analogconverter(DAC)operatesfromasingle+5Vsupply.TheDACoutputisunbuffered,resultinginalow0.3mAsupplycurrentandlow1LSBoffseterror.TheDACoutputrangeis0VtoVREF.TheDAClatchac

MCH5541

PNP/NPNBipolarTransistor(-)30V,(-)700mA,VCE(sat);(-220)190mV(max)

Overview MCH5541is(-)30V,(-)700mA,VCE(sat);(-220)190mV(max),PNP/NPN2in1typeMCPH5,BipolarTransistor. Features •CompositetypewithaPNP/NPNtransistorcontainedinonepackage, facilitatinghigh-densitymounting •Ultrasmallpackagepermittingappliedsetstobesmalland

MCH5541

MCH5541

PNP/NPNEpitaxialPlanarSiliconTransistor Features •CompositetypewithaPNP/NPNtransistorcontainedinonepackage,facilitatinghigh-densitymounting. •Ultrasmallpackagepermittingappliedsetstobesmallandslim. Applications •MOSFETgatedrivers,relaydrivers,lampdrivers,

MCH5541-TL-E

PNP/NPNBipolarTransistor(-)30V,(-)700mA,VCE(sat);(-220)190mV(max)

Overview MCH5541is(-)30V,(-)700mA,VCE(sat);(-220)190mV(max),PNP/NPN2in1typeMCPH5,BipolarTransistor. Features •CompositetypewithaPNP/NPNtransistorcontainedinonepackage, facilitatinghigh-densitymounting •Ultrasmallpackagepermittingappliedsetstobesmalland

MLL5541B

LowVoltageSurfaceMount500mWAvalancheDiodes

•1N5518BUR-1THRU1N5546BUR-1AVAILABLEINJAN,JANTXANDJANTXVPERMIL-PRF-19500/437 •ZENERDIODE,500mW •LEADLESSPACKAGEFORSURFACEMOUNT •LOWREVERSELEAKAGECHARACTERISTICS •METALLURGICALLYBONDED

MMDT5541

IdealforMedirmPowerAmplificationandSwitching

MS5541B

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