包装：散装 类别：电路保护 配件 描述：HDSS FUS 3P3W 240V 600A N4X 316

SIEMENS

西门子

BROADBAND RF POWER TRANSISTOR NPN SILICON

The RF Line NPN Silicon RF Power Transistor . . . designed primarily for wideband large–signal output amplifier stages in the 100 to 500 MHz frequency range. • Guaranteed Performance @ 400 MHz, 28 Vdc Output Power = 40 Watts Minimum Gain = 9.0 dB • Built–In Matching Network for Broadb

文件：107.71 Kbytes 页数：6 Pages

MOTOROLA

摩托罗拉

Silicon P-Channel JFET Transistor General Purpose AF Amplifier

Silicon P–Channel JFET Transistor General Purpose AF Amplifi

文件：21.37 Kbytes 页数：2 Pages

NTE

4W High Power Laser Diode

Description The SLD326YT has a compatible package, and allows independent thermal and electric design. It is a high power laser diode that affords easy optical design. Features • High-optical power output Recommended optical power output: PO = 4.0W • High-optical power output density: 4W

文件：89.08 Kbytes 页数：4 Pages

SONYSony Corporation

索尼