HVC321B

VariableCapacitanceDiodeforETtuner

Features •Lowvoltagetype(tuningvoltage1to10V),itissuitableforETwithoutDC/DCconverter. •Highcapacitanceratio.(n=10.5min) •Lowseriesresistance.(rs=1.0Ωmax)andgoodC-Vlinearity. •UltrasmallFlatPackage(UFP)issuitableforsurfacemountdesign.

HW321A

WHITEHIGHFLUXLED

HW321A

WHITEHIGHFLUXLED

I321

LeadedOscillator,TCXO,TCVCXOMetalPackage,FullSizeDIP

ProductFeatures: AvailableinBothClippedSinewaveand HCMOSOutputLevels CompatiblewithLeadfreeProcessing Applications: BaseStation IP WiMax/Wlan GeneralPurpose

INA321

microPower,Single-Supply,CMOSInstrumentationAmplifier

INA321

microPower,Single-Supply,CMOSInstrumentationAmplifier

IRF321

N-ChannelPowerMOSFETs,3.0A,350-400V

Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighvoltage,highspaedapplications,suchasoff-lineswitchingpowersupplies,ACandDCmotorcontrols,relayandsolenoiddriversanddriversandotherpulsecircuits. •LowRDs(on) •VGS

IRF321

2.8Aand3.3A,350Vand400V,1.8and2.5Ohm,N-ChannelPowerMOSFETs

Description TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplica

IRF321

N-CHANNELPOWERMOSFETS

IRF321

iscN-ChannelMosfetTransistor

DESCRIPTION •DrainCurrentID=3.3A@TC=25℃ •DrainSourceVoltage:VDSS=350V(Min) •StaticDrain-SourceOn-Resistance:RDS(on)=2.5Ω(Max) APPLICATIONS •Switchingpowersupplies •Switchingconverters,motordriver,relaydriver