丝印：HEN；Package：DO-214AB；SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR DIODE

Features Uni- and Bi-Directional Versions Available Excellent Clamping Capability Fast Response Time Classification Rating 94V-O Glass Passivated Die Construction Plastic Case Material has UL Flammability

文件：204.1 Kbytes 页数：5 Pages

SUNMATE

森美特

丝印：HEN；Package：DSBGA(YFP)；SN74AUP1G08 Low-Power Single 2-Input Positive-AND Gate

1 Features • Available in the Ultra Small 0.64mm2 Package (DPW) With 0.5mm Pitch • Low Static-Power Consumption: ICC = 0.9μA Maximum • Low Dynamic-Power Consumption: Cpd = 4.3pF Typical at 3.3V • Low Input Capacitance: Ci = 1.5pF Typical • Low Noise: Overshoot and Undershoot

文件：3.02289 Mbytes 页数：53 Pages

TI

德州仪器

丝印：HEN；Package：DSBGA(YFP)；SN74AUP1G08 Low-Power Single 2-Input Positive-AND Gate

1 Features • Available in the Ultra Small 0.64mm2 Package (DPW) With 0.5mm Pitch • Low Static-Power Consumption: ICC = 0.9μA Maximum • Low Dynamic-Power Consumption: Cpd = 4.3pF Typical at 3.3V • Low Input Capacitance: Ci = 1.5pF Typical • Low Noise: Overshoot and Undershoot

文件：3.02289 Mbytes 页数：53 Pages

TI

德州仪器

丝印：HEN；Package：DSBGA(YZP)；SN74AUP1G08 Low-Power Single 2-Input Positive-AND Gate

1 Features • Available in the Ultra Small 0.64mm2 Package (DPW) With 0.5mm Pitch • Low Static-Power Consumption: ICC = 0.9μA Maximum • Low Dynamic-Power Consumption: Cpd = 4.3pF Typical at 3.3V • Low Input Capacitance: Ci = 1.5pF Typical • Low Noise: Overshoot and Undershoot

文件：3.02289 Mbytes 页数：53 Pages

TI

德州仪器

丝印：HEN；Package：DSBGA(YZP)；SN74AUP1G08 Low-Power Single 2-Input Positive-AND Gate

1 Features • Available in the Ultra Small 0.64mm2 Package (DPW) With 0.5mm Pitch • Low Static-Power Consumption: ICC = 0.9μA Maximum • Low Dynamic-Power Consumption: Cpd = 4.3pF Typical at 3.3V • Low Input Capacitance: Ci = 1.5pF Typical • Low Noise: Overshoot and Undershoot

文件：3.02289 Mbytes 页数：53 Pages

TI

德州仪器

丝印：HEN；Package：DSBGA(YFP)；SN74AUP2G08 Low-Power Dual 2-Input Positive-AND Gate

1 Features • Wide operating VCC range of 0.8V to 3.6V • Low static-power consumption (ICC = 0.9μA max) • Low dynamic-power consumption (Cpd = 4.3pF typ at 3.3V) • Low noise – overshoot and undershoot

文件：1.39662 Mbytes 页数：38 Pages

TI

德州仪器

丝印：HEN；Package：DSBGA(YFP)；SN74AUP2G08 Low-Power Dual 2-Input Positive-AND Gate

1 Features • Wide operating VCC range of 0.8V to 3.6V • Low static-power consumption (ICC = 0.9μA max) • Low dynamic-power consumption (Cpd = 4.3pF typ at 3.3V) • Low noise – overshoot and undershoot

文件：1.39662 Mbytes 页数：38 Pages

TI

德州仪器

丝印：HEN；Package：DSBGA(YZP)；SN74AUP2G08 Low-Power Dual 2-Input Positive-AND Gate

1 Features • Wide operating VCC range of 0.8V to 3.6V • Low static-power consumption (ICC = 0.9μA max) • Low dynamic-power consumption (Cpd = 4.3pF typ at 3.3V) • Low noise – overshoot and undershoot

文件：1.39662 Mbytes 页数：38 Pages

TI

德州仪器

丝印：HEN；Package：DSBGA(YZP)；SN74AUP2G08 Low-Power Dual 2-Input Positive-AND Gate

1 Features • Wide operating VCC range of 0.8V to 3.6V • Low static-power consumption (ICC = 0.9μA max) • Low dynamic-power consumption (Cpd = 4.3pF typ at 3.3V) • Low noise – overshoot and undershoot

文件：1.39662 Mbytes 页数：38 Pages

TI

德州仪器

F - Rugged Push-Pull

文件：78.73 Kbytes 页数：3 Pages

LEMO

雷莫