256-bit, 1-bit per word random access memories

DESCRIPTION The HEF4720B and HEF4720V are 256-bit, 1-bit per word random access memories with 3-state outputs. The memories are fully decoded and completely static. Recommended supply voltage range for HEF4720B is 3 to 15 V and for HEF4720V is 4,5 to 12,5 V; minimum stand-by voltage for both type

文件：180.05 Kbytes 页数：16 Pages

PHI

PHI

256-bit, 1-bit per word random access memories

DESCRIPTION The HEF4720B and HEF4720V are 256-bit, 1-bit per word random access memories with 3-state outputs. The memories are fully decoded and completely static. Recommended supply voltage range for HEF4720B is 3 to 15 V and for HEF4720V is 4,5 to 12,5 V; minimum stand-by voltage for both type

文件：180.05 Kbytes 页数：16 Pages

PHI

PHI

256-bit, 1-bit per word random access memories

DESCRIPTION The HEF4720B and HEF4720V are 256-bit, 1-bit per word random access memories with 3-state outputs. The memories are fully decoded and completely static. Recommended supply voltage range for HEF4720B is 3 to 15 V and for HEF4720V is 4,5 to 12,5 V; minimum stand-by voltage for both type

文件：180.05 Kbytes 页数：16 Pages

PHI

PHI

256-bit, 1-bit per word random access memories

DESCRIPTION The HEF4720B and HEF4720V are 256-bit, 1-bit per word random access memories with 3-state outputs. The memories are fully decoded and completely static. Recommended supply voltage range for HEF4720B is 3 to 15 V and for HEF4720V is 4,5 to 12,5 V; minimum stand-by voltage for both type

文件：180.05 Kbytes 页数：16 Pages

PHI

PHI