Triple 3-input NAND gate

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PHI

飞利浦

Triple 3-Input NAND Gate

[Integral] Triple 3-Input NAND Gate High-Voltage Silicon-Gate CMOS The IW4023B NAND gates provide the system designer with direct emplementation of the NAND function. • Operating Voltage Range: 3.0 to 18 V • Maximum input current of 1 µA at 18 V over full packagetemperature range; 100 nA at

文件：208.49 Kbytes 页数：5 Pages

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Triple 3-Input NAND Gate

Triple 3-Input NAND Gate High-Voltage Silicon-Gate CMOS The IW4023B NAND gates provide the system designer with direct emplementation of the NAND function. • Operating Voltage Range: 3.0 to 18 V • Maximum input current of 1 μA at 18 V over full package-temperature range; 100 nA at 18 V and 25°C

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IKSEMICON

Triple 3-Input NAND Gate

[Integral] Triple 3-Input NAND Gate High-Voltage Silicon-Gate CMOS The IW4023B NAND gates provide the system designer with direct emplementation of the NAND function. • Operating Voltage Range: 3.0 to 18 V • Maximum input current of 1 µA at 18 V over full packagetemperature range; 100 nA at

文件：208.49 Kbytes 页数：5 Pages

ETC1List of Unclassifed Manufacturers

etc未分类制造商未分类制造商