VCO with built-in buffer amplifier

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BOWEI

博威集成电路

VCO with built-in buffer amplifier

BOWEI

博威集成电路

L to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET

FEATURES Low noise figure NF = 0.6 dB TYP. at f = 4 GHz High associated gain Ga = 14 dB TYP. at f = 4 GHz Gate width: Wg = 280µm Gate Length: Lg = 0.3µm

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NEC

瑞萨

Integrated Circuit Chroma Demod

Description: The NTE713 is a monolithic integrated circuit in a 14–Lead DIP type package that contains two sets of synchronous detectors with matrix circuits to achieve the R–Y, G–Y, and B–Y color difference output signals. The chroma input signal is applied to Pin3 and Pin4 while the oscillator

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NTE

LOW DROPOUT REGULATOR

DESCRIPTION TK713xx is a low dropout, linear regulator with a built-in electronic switch. Since a PNP power transistor is used, dropout voltage is very low, making it possible to maintain a stable output voltage even as the battery voltage decreases. This allows longer battery life. The TK713xx

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TOKO