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2312

BandpassFilter

KRKR Electronics, Inc.

KR Electronics, Inc.

KR

2312

Pneumaticmuffler

FESTOFesto Corporation.

费斯托公司德国FESTO费斯托(中国)有限公司

FESTO

2312-RC

HighCurrentToroidInductors

BournsBourns Inc.

伯恩斯(邦士)

Bourns

2312-RC

HighCurrentToroidInductors

BournsBourns Inc.

伯恩斯(邦士)

Bourns

2312-RC

HighCurrentToroidInductors

BournsBourns Inc.

伯恩斯(邦士)

Bourns

2312-RC

HighCurrentToroidInductorsHorizontalorverticalmount

BournsBourns Inc.

伯恩斯(邦士)

Bourns

2312-RC

HighCurrentToroidInductors

BournsBourns Inc.

伯恩斯(邦士)

Bourns

2312T

PhotoelectronicSmokedetectorwithElectronicHeatSensing

SYSTEMSENSORSystemsensor advanced ideas.

Systemsensor advanced ideas.

SYSTEMSENSOR

AM2312

MOSFET20VN-CHANNELENHANCEMENTMODE

DESCRIPTION TheAM2312isavailableinSOT-23Spackage. FEATURES VDS=20V RDS(ON),VGS@4.5V,IDS@5.0A=41mΩ RDS(ON),VGS@2.5V,IDS@4.5A=47mΩ Advancedtrenchprocesstechnology HighDensityCellDesignForUltraLowOn-Resistance Capableof2.5Vgatedrive Loweron-resistanc

AITSEMIAiT Semiconductor Inc.

AiT創瑞科技

AITSEMI

AM2312N

N-Channel20-V(D-S)MOSFET

AnalogPower

Analog Power

AnalogPower

AP2312GN

N-CHANNELENHANCEMENTMODEPOWERMOSFET

A-POWERAdvanced Power Electronics Corp.

富鼎先進電子富鼎先進電子股份有限公司

A-POWER

APM2312

N-ChannelEnhancementModeMOSFET

Features •16V/5A,RDS(ON)=35mΩ(typ.)@VGS=4.5V RDS(ON)=45mΩ(typ.)@VGS=2.5V RDS(ON)=60mΩ(typ.)@VGS=1.8V •SuperHighDenseCellDesignforExtremelyLowRDS(ON) •ReliableandRugged •SOT-23Package Applications •PowerManagementinNotebookComput

ANPECAnpec Electronics Corp

茂达电子

ANPEC

APM2312A

N-ChannelEnhancementModeMOSFET

Features •16V/5A,RDS(ON)=35mΩ(typ.)@VGS=4.5V RDS(ON)=45mΩ(typ.)@VGS=2.5V RDS(ON)=60mΩ(typ.)@VGS=1.8V •SuperHighDenseCellDesignforExtremelyLowRDS(ON) •ReliableandRugged •SOT-23Package Applications •PowerManagementinNotebookComput

ANPECAnpec Electronics Corp

茂达电子

ANPEC

APM2312AC-TR

N-ChannelEnhancementModeMOSFET

Features •16V/5A,RDS(ON)=35mΩ(typ.)@VGS=4.5V RDS(ON)=45mΩ(typ.)@VGS=2.5V RDS(ON)=60mΩ(typ.)@VGS=1.8V •SuperHighDenseCellDesignforExtremelyLowRDS(ON) •ReliableandRugged •SOT-23Package Applications •PowerManagementinNotebookComput

ANPECAnpec Electronics Corp

茂达电子

ANPEC

BC2312

Plastic-EncapsulateMOSFETS

FEATURE TrenchFETPowerMOSFET APPLICATION DC/DCConverters LoadSwitchingforPortableApplications

GWSEMIGoodwork Semiconductor Co., Ltd .

唯聖電子唯聖電子有限公司

GWSEMI

BLM2312

N-ChannelEnhancementModePowerMOSFET

BellingSHANGHAI BELLING CO., LTD.

上海贝岭上海贝岭股份有限公司

Belling

CES2312

N-Channel20V(D-S)MOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21Definition •TrenchFET®PowerMOSFET •100RgTested •ComplianttoRoHSDirective2002/95/EC APPLICATIONS •DC/DCConverters •LoadSwitchforPortableApplications

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

VBSEMI

CES2312

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■20V,4.5A,RDS(ON)=33mΩ@VGS=4.5V. RDS(ON)=40mΩ@VGS=2.5V. ■HighdensecelldesignforextremelylowRDS(ON). ■Ruggedandreliable. ■Leadfreeproductisacquired. ■SOT-23package.

CETCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CET

CHT2312PT

N-ChannelEnhancementModeFieldEffectTransistor

CHENMKOCHENMKO

CHENMKO

CHENMKO

CJ2312

SOT-23Plastic-EncapsulateMOSFETS

ZPSEMI

ZP Semiconductor

ZPSEMI

详细参数

  • 型号:

    HDSP-2312TXV

  • 制造商:

    Hewlett Packard Co

  • 功能描述:

    5 X 7 Dot Matrix Led Display, 4-character, Red, Dip

供应商型号品牌批号封装库存备注价格
Agilent
23+
DIP
8890
价格优势/原装现货/客户至上/欢迎广大客户来电查询
询价
Agilent
01+
DIP
20
询价
Agilent
2023+
DIP
80000
一级代理/分销渠道价格优势 十年芯程一路只做原装正品
询价
Agilent
2020+
DIP
16800
绝对原装进口现货,假一赔十,价格优势!?
询价
Agilent
20+/21+
HTQFP80
5600
全新原装进口价格优惠
询价
AGILENT
23+
DIP
50000
全新原装正品现货,支持订货
询价
AGILENT
21+ROHS
DIP
10000
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
Agilent
19287+
9750
进品原装正品 现货库存带17%增值发票
询价
AGILENT
22+
DIP
19
只做原装,支持实单,来电咨询。
询价
2023+
DIP
3000
进口原装现货
询价
更多HDSP-2312TXV供应商 更新时间2024-4-28 11:05:00