Single Phase 1.5 AMPS. Glass Passivated Bridge Rectifiers

文件：54.25 Kbytes 页数：2 Pages

TSC

台湾半导体

Silicon epitaxial planar type

文件：49.72 Kbytes 页数：2 Pages

PANASONIC

松下

Silicon PNP Transistor Audio Amplifier, Switch (Compl to NTE123AP)

Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . .

文件：24.36 Kbytes 页数：3 Pages

NTE

Silicon Complementary Transistors General Purpose

Description: The NTE123A (NPN) and NTE159M (PNP) are widely used “Industry Standard” complementary transistors in a TO18 type case designed for applications such as medium–speed switching and amplifiers from audio to VHF frequencies. Features: ● Low Collector Saturation Voltage: 1V (Max) ● Hig

文件：33.1 Kbytes 页数：4 Pages

NTE