High Speed CMOS two input OR gate Using Silicon Gate CMOS Process

Description The HD74HCT1G32 is high speed CMOS two input OR gate using silicon gate CMOS process. With CMOS low power dissipation, it provides high-speed equivalent to LS–TTL series. The internal circuit of three stages construction with buffer provides wide noise margin and stable output. Featu

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Standard IC>General-Purpose Logics>Uni-Logic 74HC 1G/T1G Series

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High Speed CMOS two input OR gate Using Silicon Gate CMOS Process

Description The HD74HCT1G32 is high speed CMOS two input OR gate using silicon gate CMOS process. With CMOS low power dissipation, it provides high-speed equivalent to LS–TTL series. The internal circuit of three stages construction with buffer provides wide noise margin and stable output. Featu

文件：50.23 Kbytes 页数：7 Pages

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2-input OR gate

DESCRIPTION The 74HC1G/HCT1G32 is a highspeed Si-gate CMOS device. The 74HC1G/HCT1G32 provides the 2-input OR function. The standard output currents are 1/2 compared to the 74HC/HCT32. FEATURES • Wide operating voltage from 2.0 to 6.0 V • Symmetrical output impedance • High noise immunity •

文件：602.67 Kbytes 页数：16 Pages

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2-input OR gate

1. General description The 74HC1G32; 74HCT1G32 is a single 2-input OR gate. Inputs include clamp diodes. This enables the use of current limiting resistors to interface inputs to voltages in excess of VCC. 2. Features and benefits • Wide supply voltage range from 2.0 V to 6.0 V • Symmetrical

文件：207.94 Kbytes 页数：11 Pages

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