Dual 4-input NAND Gates

Features • High Speed Operation: tpd= 9 ns typ (CL= 50 pF) • High Output Current: Fanout of 10 LSTTL Loads • Wide Operating Voltage: VCC= 2 to 6 V • Low Input Current: 1 µA max • Low Quiescent Supply Current: ICC(static) = 1 µA max (Ta = 25°C)

文件：91.87 Kbytes 页数：7 Pages

RENESAS

瑞萨

Dual 4-input NAND Gates

Features • High Speed Operation: tpd= 9 ns typ (CL= 50 pF) • High Output Current: Fanout of 10 LSTTL Loads • Wide Operating Voltage: VCC= 2 to 6 V • Low Input Current: 1 µA max • Low Quiescent Supply Current: ICC(static) = 1 µA max (Ta = 25°C)

文件：91.87 Kbytes 页数：7 Pages

RENESAS

瑞萨

Dual 4-input NAND Gates

Features • High Speed Operation: tpd= 9 ns typ (CL= 50 pF) • High Output Current: Fanout of 10 LSTTL Loads • Wide Operating Voltage: VCC= 2 to 6 V • Low Input Current: 1 µA max • Low Quiescent Supply Current: ICC(static) = 1 µA max (Ta = 25°C)

文件：91.87 Kbytes 页数：7 Pages

RENESAS

瑞萨

Dual 4-input NAND Gates

Features • High Speed Operation: tpd= 9 ns typ (CL= 50 pF) • High Output Current: Fanout of 10 LSTTL Loads • Wide Operating Voltage: VCC= 2 to 6 V • Low Input Current: 1 µA max • Low Quiescent Supply Current: ICC(static) = 1 µA max (Ta = 25°C)

文件：91.87 Kbytes 页数：7 Pages

RENESAS

瑞萨