Quad. 2-input NAND Gates (with open drain outputs)

文件：83.38 Kbytes 页数：7 Pages

RENESAS

瑞萨

Quad. 2-input NAND Gates (with open drain outputs)

文件：83.38 Kbytes 页数：7 Pages

RENESAS

瑞萨

Quad. 2-input NAND Gates (with open drain outputs)

文件：83.38 Kbytes 页数：7 Pages

RENESAS

瑞萨

Quad. 2-input NAND Gates (with open drain outputs)

Features • High Speed Operation: tpd = 9 ns typ (CL = 50 pF) • High Output Current: Fanout of 10 LSTTL Loads • Wide Operating Voltage: VCC = 2 to 6 V • Low Input Current: 1 µA max • Low Quiescent Supply Current: ICC (static) = 1 µA max (Ta = 25°C)

文件：44.54 Kbytes 页数：7 Pages

HitachiHitachi Semiconductor

日立日立公司

Quad. 2-input NAND Gates (with open drain outputs)

文件：83.38 Kbytes 页数：7 Pages

RENESAS

瑞萨

Quad. 2-input NAND Gates (with open drain outputs)

Features • High Speed Operation: tpd = 9 ns typ (CL = 50 pF) • High Output Current: Fanout of 10 LSTTL Loads • Wide Operating Voltage: VCC = 2 to 6 V • Low Input Current: 1 µA max • Low Quiescent Supply Current: ICC (static) = 1 µA max (Ta = 25°C)

文件：44.54 Kbytes 页数：7 Pages

HitachiHitachi Semiconductor

日立日立公司