200V Logic Level N-Channel MOSFET

Features • 9.0A, 200V, RDS(on) = 0.28Ω @VGS = 10 V • Low gate charge ( typical 16 nC) • Low Crss ( typical 17 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability • Low level gate drive requirement allowing direct opration from logic drivers

文件：793.58 Kbytes 页数：7 Pages

HUIXIN

慧芯电子

N-Channel Enhancement Mode Power MOSFET

文件：577.71 Kbytes 页数：7 Pages

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华之美半导体

Low level gate drive requirement allowing direct

文件：1.83718 Mbytes 页数：7 Pages

KERSEMI

200V H-Channel Mosfet

文件：1.60828 Mbytes 页数：8 Pages

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