HCZ472

Ceramic High Voltage Disc Capacitors, Class 2

HCZ472BCKR

Ceramic High Voltage Disc Capacitors, Class 2

HCZ472KBCEH0KR

包装：卷带（TR） 封装/外壳：径向，圆片式 类别：电容器 陶瓷电容器 描述：CAP CER 4700PF 3KV RADIAL

HCZ472MBCDJ0KR

包装：卷带（TR） 封装/外壳：径向，圆片式 类别：电容器 陶瓷电容器 描述：CAP CER 4700PF 3KV RADIAL

HCZ472MBCDJ0KR

包装：卷带（TR） 封装/外壳：径向，圆片式 类别：电容器 陶瓷电容器 描述：CAP CER 4700PF 3KV RADIAL

472

3M??AluminumFoilTape427

472

THREADEDROUNDSTANDOFF

472

PrecisionPotentiometer/PositionSensor

472JE

CarbonCompositionMoldedOD/OFSeries(5Tol.)OASeries(10)

472-SERIES

472SeriesHighSpeedCardEdgeConnectors|BoardtoBoard0.8mmPitch|VerticalSMT|Plug

Features LowProfileforSpaceSaving InsertionLoss:DifferentialPairSignaling19Gbps@-3dB Availablein100and150contacts AvailableinVerticalSMTandRightAngleSMT PCIe3.0Compliant Application:Server,DataStorage

A472

GASDISCHARGETUBE-9,5x11,5mm

A472G

NTCThermistors,LowThermalGradientLugSensors

AH472M

CERAMICDISCCAPACITORSAFETYRECOGNIZED

AOD472

N-Channel20-V(D-S)175CMOSFET

FEATURES •TrenchFETPowerMOSFET •175°CMaximumJunctionTemperature •100RgTested

AOD472

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=55A@TC=25℃ ·DrainSourceVoltage :VDSS=25V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=6mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

AOD472

N-ChannelEnhancementModeFieldEffectTransistor

GeneralDescription TheAOD472usesadvancedtrenchtechnologyanddesigntoprovideexcellentRDS(ON)withlowgatecharge.ThisdeviceissuitableforuseinPWM,loadswitchingandgeneralpurposeapplications.StandardproductAOD472isPb-free(meetsROHS&Sony259specifications).AOD4

AOD472A

N-ChannelSDMOSTMPOWERTransistor

GeneralDescription •LatestTrenchPowerMOSFETtechnology •VeryLowRDS(on)at4.5VGS •LowGateCharge •HighCurrentCapability •RoHSandHalogen-FreeCompliant Application •DC/DCConvertersinComputing •IsolatedDC/DCConvertersinTelecomandIndustrial ProductSummary VDS

AOD472A

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=55A@TC=25℃ ·DrainSourceVoltage :VDSS=25V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=5.5mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

AOD472AL

N-ChannelSDMOSTMPOWERTransistor

GeneralDescription •LatestTrenchPowerMOSFETtechnology •VeryLowRDS(on)at4.5VGS •LowGateCharge •HighCurrentCapability •RoHSandHalogen-FreeCompliant Application •DC/DCConvertersinComputing •IsolatedDC/DCConvertersinTelecomandIndustrial ProductSummary VDS

AOD472L

N-ChannelEnhancementModeFieldEffectTransistor

GeneralDescription TheAOD472usesadvancedtrenchtechnologyanddesigntoprovideexcellentRDS(ON)withlowgatecharge.ThisdeviceissuitableforuseinPWM,loadswitchingandgeneralpurposeapplications.StandardproductAOD472isPb-free(meetsROHS&Sony259specifications).AOD4