HCTS273MS

RadiationHardenedOctalDFlip-Flop

Description TheIntersilHCTS273MSisaRadiationHardenedoctalDflip-flop,positiveedgetriggered,withreset. TheHCTS273MSutilizesadvancedCMOS/SOStechnologytoachievehigh-speedoperation.Thisdeviceisamemberofradiationhardened,high-speed,CMOS/SOSLogicFamily. TheHCTS273MS

HCTS273MS

RadiationHardenedOctalDFlip-Flop

Features •3MicronRadiationHardenedCMOSSOS •TotalDose200KRAD(Si) •SEPEffectiveLETNoUpsets:>100MEV-cm2/mg •SingleEventUpset(SEU)Immunity1x1012RAD(Si)/s •DoseRateUpset>1010RAD(Si)/s.20nsPulse •La

HYP273

LPREPLACEMENTPCBASSEMBLYHYP273

1-ALLPARTSSHALLBEPACKAGEDASPERL-COMSPECPKG-00012 -ALLDIMENSIONSFORREFERENCEONLY-

HZS273

SiliconEpitaxialPlanarZenerDiodeforStabilizedPowerSupply

IMX273LLR

CMOSImageSensorswith3.45μmand6.9μmPixelsandGlobalShutterFunctionforIndustrialandSensingApplicationsustrial

■Globalshutterfunction ■Highframerate ■Avarietyoffunctions(externaltriggermode,multipleexposurefunction, ROImode,multipleimagesensorsynchronizationfunction,etc.) ■Compactdevicesize(14mm×14mm) ■Expandedlineup(3.45μmpixeland6.9μmpixel,SubLVDS,MIPIinte

IMX273LQR

CMOSImageSensorswith3.45μmand6.9μmPixelsandGlobalShutterFunctionforIndustrialandSensingApplicationsustrial

■Globalshutterfunction ■Highframerate ■Avarietyoffunctions(externaltriggermode,multipleexposurefunction, ROImode,multipleimagesensorsynchronizationfunction,etc.) ■Compactdevicesize(14mm×14mm) ■Expandedlineup(3.45μmpixeland6.9μmpixel,SubLVDS,MIPIinte

IS273

1Wepoxysealtype

ISCPH273P

iscP-ChannelMOSFETTransistor

KDV273

VARIABLECAPACITANCEDIODESILICONEPITAXIALPLANARDIODE(VCOFORUHF/VHFBAND)

VCOFORUHF/VHFBAND. FEATURES ●HighCapacitanceRatio:C1V/C4V=2.0(Typ.) ●LowSeriesResistance:rs=0.39ή(Typ.)

KDV273

USCPACKAGE