HCTS164KMSR中文资料瑞萨数据手册PDF规格书

特性 Features

• 3 Micron Radiation Hardened CMOS SOS

• Total Dose 200K RAD (Si)

• Dose Rate Survivability >1012 RAD (Si)/s (20ns Pulse)

• Dose Rate Upset >1010 RAD (Si)/s (20ns Pulse)

• Single Event Ray Upset Rate < 2 x 10-9 Errors/Bit Day

(Typ)

• LET Threshold >100 MEV-cm2/mg

• Latch-Up-Free Under Any Conditions

• Military Temperature Range: -55oC to +125oC

• Significant Power Reduction Compared to LSTTL ICs

• DC Operating Voltage Range: 4.5V to 5.5V

• Input Logic Levels

-VIL = 0.8 VCC (Max)

-VIH = VCC/2 (Min)

• Input Current Levels Ii 5A at VOL, VOH