HCTS139DSLASHSAMPLE中文资料瑞萨数据手册PDF规格书

特性 Features

•3 Micron Radiation Hardened SOS CMOS

•Total Dose 200K RAD (Si)

•SEP Effective LET No Upsets: >100 MEV-cm2/mg

•Single Event Upset (SEU) Immunity < 2 x 10-9 Errors/Bit-Day (Typ)

•Dose Rate Survivability: >1 x 1012 RAD (Si)/s

•Dose Rate Upset >1010 RAD (Si)/s 20ns Pulse

•Latch-Up Free Under Any Conditions

•Fanout (Over Temperature Range)

-Bus Driver Outputs - 15 LSTTL Loads

•Military Temperature Range: -55oC to +125oC

•Significant Power Reduction Compared to LSTTL ICs

•DC Operating Voltage Range: 4.5V to 5.5V

•LSTTL Input Compatibility

-VIL = 0.8V Max

-VIH = VCC/2 Min

•Input Current Levels Ii  5A at VOL, VOH