HER253

PlasticHigh-EfficiencyRectifiers

HER253

HIGHEFFICIENCYRECTIFIERS

FEATURES ♦TheplasticpackagecarriesUnderwritersLaboratoryFlammabilityClassification94V-0 ♦Highspeedswitchingforhighefficiency ♦Lowreverseleakage ♦Highforwardsurgecurrentcapability ♦Hightemperaturesolderingguaranteed:250°C/10seconds,0.375”(9.5mm)leadlength,5lbs

HER253

HIGHEFFICIENTRECTIFIERDIODES

FEATURES: *Highcurrentcapability *Highsurgecurrentcapability *Highreliability *Lowreversecurrent *Lowforwardvoltagedrop *Fastswitchingforhighefficiency *Pb/RoHSFree

HER253G

HIGHEFFICIENCYGLASSPASSIVATEDRECTIFIER

FEATURES •Glasspassivatedchipjunction •Lowpowerloss,highefficiency •Lowleakage •Highspeedswitching •Highsurgecapacity •Hightemperaturesolderingguaranteed260℃/10seconds,0.375″(9.5mm)leadlength

HER253G

PlasticHigh-EfficiencyRectifiersReverseVoltage50to1000VForwardCurrent2.5A

ReverseVoltage50to1000V ForwardCurrent2.5A Features •Glasspassivatedchip •Lowreverseleakage •Highforwardsurgecapability •Hightemperaturesolderingguaranteed:260℃/10seconds,0.375(9.5mm)leadlength,5lbs.(2.3kg)tension •LeadandbodyaccordingwithRoHSstandard

HER253G

PlasticHigh-EfficiencyRectifiers

INA253

HighVoltage,Bidirectional,Zero-Drift,Current-ShuntMonitorwithIntegrated2-m廓PrecisionLowInductiveShuntResistor

INA253

HighVoltage,Bidirectional,Zero-Drift,Current-ShuntMonitorWithIntegrated,2-m(ohm),Precision,LowInductiveShuntResistor

IQS253

Configurable3ChannelDYCALCapacitiveSensorwithAutomaticCompensation

IRF253

N-CHANNELPOWERMOSFETS

FEATURES •LowRds(on) •ImprovedInductiveruggedness •Excellenthighvoltagestability •Fastswitchingtimes •Ruggedpolysillcongatecellstructure •LowInputcapacitance •Extendedsafeoperatingarea •Improvedhightemperaturereliability •TO-3package(Highvoltage)