HCF40109BM1中文资料意法半导体数据手册PDF规格书

DESCRIPTION

HCF40109B is a monolithic integrated circuit fabricated in Metal Oxide Semiconductor technology available in DIP and SOP packages.

HCF40109B contains four low-to-high voltage level shifting circuits.

■ INDIPENDENCE OF POWER SUPPLY SEQUENCE CONSIDERATIONS - VCC CAN EXCEED VDD, INPUT SIGNALS CAN EXCEED BOTH VCC AND VDD

■ UP AND DOWN LEVEL SHIFTING CAPABILITY

■ THREE-STATE OUTPUTS WITH SEPARATE ENABLE CONTROLS

■ STANDARDIZED SYMMETRICAL OUTPUT CHARACTERISTICS

■ QUIESCENT CURRENT SPECIFIED UP TO 20V

■ 5V, 10V, AND 15V PARAMETRIC RATINGS

■ INPUT LEAKAGE CURRENT

II = 100nA (MAX) AT VDD = 18V TA = 25°C

■ 100 TESTED FOR QUIESCENT CURRENT

■ MEETS ALL REQUIREMENTS OF JEDEC JESD13B STANDARD SPECIFICATIONS FOR DESCRIPTION OF B SERIES CMOS DEVICES