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INA332AIDGKR

Low-Power,Single-Supply,CMOSINSTRUMENTATIONAMPLIFIERS

BURR-BROWN

Burr-Brown (TI)

INA332AIDGKR

INSTRUMENTATIONAMPLIFIERS

TI1Texas Instruments

德州仪器美国德州仪器公司

INA332AIDGKR

Low-Power,Single-Supply,CMOSINSTRUMENTATIONAMPLIFIERS

FEATURES DESIGNEDFORLOWCOST HIGHGAINACCURACY:G=5,0.07%,2ppm/°C GAINSETWITHEXT.RESISTORSFOR>5V/V HIGHCMRR:73dBDC,50dBat45kHz LOWBIASCURRENT:0.5pA BANDWIDTH,SLEWRATE:2.0MHz,5V/μs RAIL-TO-RAILOUTPUTSWING:(V+)–0.02V WIDETEMPERATURERANGE:–55°Cto+125°C

TI2Texas Instruments

德州仪器美国德州仪器公司

INA332AIDGKR.B

Low-Power,Single-Supply,CMOSINSTRUMENTATIONAMPLIFIERS

FEATURES DESIGNEDFORLOWCOST HIGHGAINACCURACY:G=5,0.07%,2ppm/°C GAINSETWITHEXT.RESISTORSFOR>5V/V HIGHCMRR:73dBDC,50dBat45kHz LOWBIASCURRENT:0.5pA BANDWIDTH,SLEWRATE:2.0MHz,5V/μs RAIL-TO-RAILOUTPUTSWING:(V+)–0.02V WIDETEMPERATURERANGE:–55°Cto+125°C

TI2Texas Instruments

德州仪器美国德州仪器公司

INA332AIDGKT

Low-Power,Single-Supply,CMOSINSTRUMENTATIONAMPLIFIERS

BURR-BROWN

Burr-Brown (TI)

INA332AIDGKT

INSTRUMENTATIONAMPLIFIERS

TI1Texas Instruments

德州仪器美国德州仪器公司

INA332AIDGKT

Low-Power,Single-Supply,CMOSINSTRUMENTATIONAMPLIFIERS

FEATURES DESIGNEDFORLOWCOST HIGHGAINACCURACY:G=5,0.07%,2ppm/°C GAINSETWITHEXT.RESISTORSFOR>5V/V HIGHCMRR:73dBDC,50dBat45kHz LOWBIASCURRENT:0.5pA BANDWIDTH,SLEWRATE:2.0MHz,5V/μs RAIL-TO-RAILOUTPUTSWING:(V+)–0.02V WIDETEMPERATURERANGE:–55°Cto+125°C

TI2Texas Instruments

德州仪器美国德州仪器公司

INA332AIDGKT.B

Low-Power,Single-Supply,CMOSINSTRUMENTATIONAMPLIFIERS

FEATURES DESIGNEDFORLOWCOST HIGHGAINACCURACY:G=5,0.07%,2ppm/°C GAINSETWITHEXT.RESISTORSFOR>5V/V HIGHCMRR:73dBDC,50dBat45kHz LOWBIASCURRENT:0.5pA BANDWIDTH,SLEWRATE:2.0MHz,5V/μs RAIL-TO-RAILOUTPUTSWING:(V+)–0.02V WIDETEMPERATURERANGE:–55°Cto+125°C

TI2Texas Instruments

德州仪器美国德州仪器公司

IP332

4xDDR3DIMM,Max.32GB

etc2List of Unclassifed Manufacturers

etc未分类制造商etc2未分类制造商

IRF332

N-CHANNELPOWERMOSFETS

FEATURES ●LowRDS(on) ●Improvedinductiveruggedness ●Fastswitchingtimes ●Ruggedpolysilicongatecellstructure ●LowInputcapacitance ●Extendedsafeoperatingarea ●Improvedhightemperaturereliability ●TO-3package(Standard)

SamsungSamsung semiconductor

三星三星半导体

详细参数

  • 型号:

    HCD332

  • 制造商:

    GOLLEDGE

  • 制造商全称:

    GOLLEDGE

  • 功能描述:

    5V OCXO HCMOS OUTPUT STRATUM 3E

供应商型号品牌批号封装库存备注价格
GOLLEDGE
23+
NA
39960
只做进口原装,终端工厂免费送样
询价
GOLLEDGE
14+
NA
100
终端备货原装现货-军工器件供应商
询价
HARRIS
2015+
DIP
19889
一级代理原装现货,特价热卖!
询价
RENESAS/瑞萨
23+
56060
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
Phoenix/菲尼克斯
23/24+
1580163
6491
优势特价 原装正品 全产品线技术支持
询价
HIT
05+
原厂原装
7312
只做全新原装真实现货供应
询价
RENESAS
22+
LP
8000
原装正品支持实单
询价
HITACHI/日立
22+
42357
原装正品现货,可开13个点税
询价
FAIRCHILD/仙童
23+
SSOP
69820
终端可以免费供样,支持BOM配单!
询价
RENESAS/瑞萨
11+
360
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
更多HCD332供应商 更新时间2025-7-30 9:38:00