中低压MOS（20-150V）

HXC-Power

惠海半导体

SWITCHMODE??Power Rectifiers

SWITCHMODE™ Power Rectifiers . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • Center–Tap Configuration • Guardring for Stress Protection • Low Forward Voltage • 150°C Operating Junction Temperature • Guara

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MOTOROLA

摩托罗拉

15 Ampere Schottky Barrier Rectifiers

Features • Low power loss, high efficiency. • High surge capacity. • For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. • Metal silicon junction, majority carrier conduction. • High current capacity, low forward voltage drop. • Guarding for

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FAIRCHILD

仙童半导体

Integrated Circuit TV Sync. Horizontal/Vertical OSC

Features: Single Chip for Vertical and Horizontal Deflection System Synchro Pulse Processing Vertical Deflection: Oscillator to Driver, Video Blanking Horizontal Deflection: AFC Comparator to Buffer, Video Blanking Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)

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NTE