HC13240

Breake Away Header .025(0.64mm) Square Posts

[FOXCONN] BreakeAwayHeader.025(0.64mm)SquarePosts

HC13241

Breake Away Header .025(0.64mm) Square Posts

[FOXCONN] BreakeAwayHeader.025(0.64mm)SquarePosts

HC13243

Breake Away Header .025(0.64mm) Square Posts

[FOXCONN] BreakeAwayHeader.025(0.64mm)SquarePosts

HC13247

Breake Away Header .025(0.64mm) Square Posts

[FOXCONN] BreakeAwayHeader.025(0.64mm)SquarePosts

HO1324

640.0MHzSAWOscillator

Thisgeneral-purposeoscillatorisstabilizedbysurface-acoustic-wave(SAW)technology.Fundamentaloscillationat640.0MHzeliminatesallinternallygeneratedspuriousoutputsexceptintegralharmonicsof640.0MHz.Thecompactsizeoftherugged,metal,hermetically-sealedcasemakesthisosci

HX1324FNL

MDL,SIN,100D,1:1,SM,TU

HX1324NL

MDL,SIN,100D,1:1,SM,OH

IIRF1324

N-ChannelMOSFETTransistor

•DESCRITION •reliabledeviceforuseinawidevarietyofapplications •FEATURES •Staticdrain-sourceon-resistance:RDS(on)≤1.5mΩ •Enhancementmode: •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation

IRF1324

N-ChannelMOSFETTransistor

•DESCRITION •reliabledeviceforuseinawidevarietyofapplications •FEATURES •Staticdrain-sourceon-resistance:RDS(on)≤1.5mΩ •Enhancementmode: •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation

IRF1324LPBF

HEXFETPowerMOSFET

Benefits •ImprovedGate,AvalancheandDynamicdV/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheSOA •EnhancedbodydiodedV/dtanddI/dtCapability •Lead-Free Applications •HighEfficiencySynchronousRectificationinSMPS •UninterruptiblePowerSupply •HighSpeedPow