KDZVTF39A

Marking：HC；Package：SOD-123FL；Zener Diode

●Features Highreliability Smallpowermoldtype ●Application Voltageregulation

MMBD3004

Marking：HC；Package：SOT-23；Silicon Epitaxial Planar Switching Diode

Features •Fastswitchingspeed •HighConductance •HighReverseBreakdownVoltageRating

MMBD3004

Marking：HC；Package：TO-236；Silicon Epitaxial Planar Switching Diode

SiliconEpitaxialPlanarSwitchingDiode HighVoltageSwitchingDiode Features •Fastswitchingspeed •HighConductance •HighReverseBreakdownVoltageRating

PE3620M1Q_R1_00001

Marking：HC；Package：DFN1006-2L；Hi-Surge ESD Protection

Features IEC61000-4-2(ESD)：±30kVAir,±30kVContact IEC61000-4-4(EFT)：40A(5/50ns) IEC61000-4-5(Lightning)：8A(8/20uS) Lowleakagecurrent,maximumof100nAatratedvoltage Lowclampingvoltage LeadfreeincompliancewithEURoHS2.0 GreenmoldingcompoundasperIEC6

PEC3107S1Q_R1_00001

Marking：HC；Package：DFN0603-2L；ESD PROTECTION

Features IEC61000-4-2(ESD):±15kVAir,±12kVContact IEC61000-4-4(EFT):40A(5/50ns) IEC61000-4-5(Lightning):2A(8/20uS) Lowleakagecurrent,maximumof1μAatratedvoltage Lowclampingvoltage LeadfreeincompliancewithEURoHS2.0 GreenmoldingcompoundasperIEC61249st

PZU6.2BL

Marking：HC；Package：DFN1006-2；Single Zener diodes in a SOD882 package

1.1.Generaldescription General-purposeZenerdiodesinaSOD882leadlessultrasmallSurface-MountedDevice(SMD) plasticpackage. 1.2.Features •Non-repetitivepeakrerversepowerdissipation:PZSM≤40W •Totalpowerdissipation:Ptot≤250mW •Toleranceseries:B:approximately±5

TC7SH126F

Marking：HC；Package：SMV；CMOS Digital Integrated Circuits Silicon Monolithic

1.FunctionalDescription •BusBufferwith3-StateOutput 2.Features (1)AEC-Q100(Rev.H)(Note1) (2)Wideoperatingtemperaturerange:Topr=-40to125(Note2) (3)Highspeedoperation:tpd=3.8ns(typ.)(VCC=5.0V,CL=15pF) (4)Lowpowerdissipation:ICC=2.0μA(max)(Ta=

TC7SH126FU

Marking：HC；Package：USV；CMOS Digital Integrated Circuits Silicon Monolithic

1.FunctionalDescription •BusBufferwith3-StateOutput 2.Features (1)AEC-Q100(Rev.H)(Note1) (2)Wideoperatingtemperaturerange:Topr=-40to125(Note2) (3)Highspeedoperation:tpd=3.8ns(typ.)(VCC=5.0V,CL=15pF) (4)Lowpowerdissipation:ICC=2.0μA(max)(Ta=

74HC1G04GW-Q100

Marking：HC；Package：TSSOP5；Automotive product qualification in accordance with AEC-Q100

BAS19

Marking：HC；Package：TO-236；Silicon Epitaxial Planar Diodes