丝印：HBN；Package：DSBGA(YFP)；SN74AUP1G02 Low-Power Single 2-Input Positive-NOR Gate

1 Features 1• Available in the Ultra Small 0.64 mm2 Package (DPW) with 0.5-mm Pitch • Low Static-Power Consumption (ICC = 0.9 μA Max) • Low Dynamic-Power Consumption (Cpd = 4.3 pF Typ at 3.3 V) • Low Input Capacitance (Ci = 1.5 pF Typ) • Low Noise – Overshoot and Undershoot

文件：2.44413 Mbytes 页数：47 Pages

TI

德州仪器

丝印：HBN；Package：DSBGA(YFP)；SN74AUP1G02 Low-Power Single 2-Input Positive-NOR Gate

1 Features 1• Available in the Ultra Small 0.64 mm2 Package (DPW) with 0.5-mm Pitch • Low Static-Power Consumption (ICC = 0.9 μA Max) • Low Dynamic-Power Consumption (Cpd = 4.3 pF Typ at 3.3 V) • Low Input Capacitance (Ci = 1.5 pF Typ) • Low Noise – Overshoot and Undershoot

文件：2.44413 Mbytes 页数：47 Pages

TI

德州仪器

丝印：HBN；Package：DSBGA；LOW-POWER DUAL 2-INPUT POSITIVE-NOR GATE

1FEATURES • Available in the Texas Instruments NanoStar™ Package • Low Static-Power Consumption (ICC = 0.9 mA Maximum) • Low Dynamic-Power Consumption (Cpd = 4.3 pF Typ at 3.3 V) • Low Input Capacitance (Ci = 1.5 pF Typical) • Low Noise – Overshoot and Undershoot

文件：816.16 Kbytes 页数：25 Pages

TI

德州仪器

丝印：HBN；Package：DSBGA；LOW-POWER DUAL 2-INPUT POSITIVE-NOR GATE

1FEATURES • Available in the Texas Instruments NanoStar™ Package • Low Static-Power Consumption (ICC = 0.9 mA Maximum) • Low Dynamic-Power Consumption (Cpd = 4.3 pF Typ at 3.3 V) • Low Input Capacitance (Ci = 1.5 pF Typical) • Low Noise – Overshoot and Undershoot

文件：816.16 Kbytes 页数：25 Pages

TI

德州仪器

Octuple High Voltage NPN Epitaxial Planar Transistor

Description • High breakdown voltage. (BVCEO=400V) • Low saturation voltage, typical VCE(sat) =0.12V at Ic/IB =20mA/1mA. • Complementary to HBP1804M65 • Pb-free lead plating and halogen-free package

文件：344.71 Kbytes 页数：7 Pages

CYSTEKEC

全宇昕科技

General Purpose NPN Epitaxial Planar Transistors

Features • Two BTN2222A chips in a SOT-363R package. • Mounting possible with SOT-323 automatic mounting machines. • Transistor elements are independent, eliminating interference. • Mounting cost and area can be cut in half.

文件：168.14 Kbytes 页数：4 Pages

CYSTEKEC

全宇昕科技

General Purpose NPN Epitaxial Planar Transistors

Features • Two BTC2411chips in a SOT-363 package. • Mounting possible with SOT-323 automatic mounting machines. • Transistor elements are independent, eliminating interference. • Mounting cost and area can be cut in half. • High IC(Max) . IC (Max) = 0.6A • Low VCE(sat) , TYP. VCE(sat) = 0.2V

文件：200.07 Kbytes 页数：5 Pages

CYSTEKEC

全宇昕科技

General Purpose NPN Epitaxial Planar Transistors (dual transistors)

Features • Two BTC2412 chips in a SOT-363R package. • Mounting possible with SOT-323 automatic mounting machines. • Transistor elements are independent, eliminating interference. • Mounting cost and area can be cut in half. • Low Cob. Typ. Cob=2.0pF • Complementary to HBP1037S6R

文件：182.58 Kbytes 页数：5 Pages

CYSTEKEC

全宇昕科技

Low Vcesat NPN Epitaxial Planar Transistor (Dual Transistors)

Features • Two BTD2444 chips in a SOT-363 package. • Mounting possible with SOT-323 automatic mounting machines. • Transistor elements are independent, eliminating interference. • Mounting cost and area can be cut in half. • Low VCE(sat), VCE(sat)=40mV (typical), at IC / IB = 50mA / 2.5mA •

文件：185.96 Kbytes 页数：5 Pages

CYSTEKEC

全宇昕科技

Low Vcesat NPN Epitaxial Planar Transistor

Features • Two BTD2515 chips in a SOT-363 package. • Mounting possible with SOT-323 automatic mounting machines. • Transistor elements are independent, eliminating interference. • Mounting cost and area can be cut in half. • Low VCE(sat), VCE(sat)=25mV (max), at IC / IB = 10mA / 0.5mA. • Wei

文件：263.3 Kbytes 页数：6 Pages

CYSTEKEC

全宇昕科技