HB54R1G9F2-A75B中文资料美光科技数据手册PDF规格书

描述 Description

The HB54R1G9F2 is a 128M × 72 × 2 bank Double Data Rate (DDR) SDRAM Module, mounted 36 pieces of 256Mbits DDR SDRAM (HM5425401BTB) sealed in TCP package, 1 piece of PLL clock driver, 2 pieces of register driver and 1 piece of serial EEPROM (2k bits EEPROM) for Presence Detect (PD).

特性 Features

• 184-pin socket type package (dual lead out)

- Outline: 133.35mm (Length) × 43.18mm (Height) × 4.80mm (Thickness)

- Lead pitch: 1.27mm

• 2.5V power supply (VCC/VCCQ)

• SSTL-2 interface for all inputs and outputs

• Clock frequency: 143MHz/133MHz/125MHz (max.)

• Data inputs and outputs are synchronized with DQS

• 4 banks can operate simultaneously and independently (Component)

• Burst read/write operation

• Programmable burst length: 2, 4, 8

- Burst read stop capability

• Programmable burst sequence

- Sequential

- Interleave

• Start addressing capability

- Even and Odd

• Programmable /CAS latency (CL): 3, 3.5

• 8192 refresh cycles: 7.8µs (8192/64ms)

• 2 variations of refresh

- Auto refresh

- Self refresh