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HB52RD648DC-B中文资料PDF规格书

HB52RD648DC-B
厂商型号

HB52RD648DC-B

功能描述

512 MB Unbuffered SDRAM S.O.DIMM 64-Mword 횞 64-bit, 133/100 MHz Memory Bus, 2-Bank Module (16 pcs of 32 M 횞 8 components) PC133/100 SDRAM

文件大小

160.96 Kbytes

页面数量

20

生产厂商 Elpida Memory
企业简称

ELPIDA美光科技

中文名称

美光科技股份有限公司官网

原厂标识
数据手册

下载地址一下载地址二到原厂下载

更新时间

2024-6-15 13:10:00

HB52RD648DC-B规格书详情

Description

The HB52RF648DC, HB52RD648DC are a 32M × 64 × 2 banks Synchronous Dynamic RAM Small Outline Dual In-line Memory Module (S.O.DIMM), mounted 16 pieces of 256-Mbit SDRAM (HM5225805BTB) sealed in TCP package and 1 piece of serial EEPROM (2-kbit) for Presence Detect (PD). An outline of the products is 144-pin Zig Zag Dual tabs socket type compact and thin package. Therefore, they make high density mounting possible without surface mount technology. They provide common data inputs and outputs. Decoupling capacitors are mounted beside TCP on the module board.

Features

• Fully compatible with: JEDEC standard outline 8-byte S.O.DIMM

• 144-pin Zig Zag Dual tabs socket type (dual lead out)

- Outline: 67.60 mm (Length) × 31.75 mm (Height) × 3.80 mm (Thickness)

- Lead pitch: 0.80 mm

• 3.3 V power supply

• Clock frequency: 133/100 MHz (max)

• LVTTL interface

• Data bus width: × 64 Non parity

• Single pulsed RAS

• 4 Banks can operates simultaneously and independently

• Burst read/write operation and burst read/single write operation capability

• Programmable burst length : 1/2/4/8

• 2 variations of burst sequence

- Sequential

- Interleave

• Programmable CE latency: 2/3

• Byte control by DQMB

• Refresh cycles: 8192 refresh cycles/64 ms

• 2 variations of refresh

- Auto refresh

- Self refresh

• Low self refresh current: HB52RF648DC-xxBL (L-version) : HB52RD648DC-xxBL (L-version)

产品属性

  • 型号:

    HB52RD648DC-B

  • 制造商:

    ELPIDA

  • 制造商全称:

    Elpida Memory

  • 功能描述:

    512 MB Unbuffered SDRAM S.O.DIMM 64-Mword 】 64-bit, 133/100 MHz Memory Bus, 2-Bank Module(16 pcs of 32 M 】 8 components) PC133/100 SDRAM

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