丝印：HB158；Package：TSSOP；QUADRUPLE 2-LINE TO 1-LINE DATA SELECTORS/MULTIPLEXERS

Inputs Are TTL-Voltage Compatible Latch-Up Performance Exceeds 250 mA Per JESD 17 ESD Protection Exceeds JESD 22 – 2000-V Human-Body Model (A114-A) – 200-V Machine Model (A115-A) – 1000-V Charged-Device Model (C101) description/ordering information These quadruple 2-line to 1-line data

文件：412.44 Kbytes 页数：14 Pages

TI

德州仪器

丝印：HB158；Package：TSSOP；QUADRUPLE 2-LINE TO 1-LINE DATA SELECTORS/MULTIPLEXERS

Inputs Are TTL-Voltage Compatible Latch-Up Performance Exceeds 250 mA Per JESD 17 ESD Protection Exceeds JESD 22 – 2000-V Human-Body Model (A114-A) – 200-V Machine Model (A115-A) – 1000-V Charged-Device Model (C101) description/ordering information These quadruple 2-line to 1-line data

文件：412.44 Kbytes 页数：14 Pages

TI

德州仪器

丝印：HB158；Package：TSSOP；QUADRUPLE 2-LINE TO 1-LINE DATA SELECTORS/MULTIPLEXERS

Inputs Are TTL-Voltage Compatible Latch-Up Performance Exceeds 250 mA Per JESD 17 ESD Protection Exceeds JESD 22 – 2000-V Human-Body Model (A114-A) – 200-V Machine Model (A115-A) – 1000-V Charged-Device Model (C101) description/ordering information These quadruple 2-line to 1-line data

文件：412.44 Kbytes 页数：14 Pages

TI

德州仪器

丝印：HB125EP；Package：TSSOP；QUADRUPLE BUS BUFFER GATE WITH 3-STATE OUTPUTS

Controlled Baseline − One Assembly/Test Site, One Fabrication Site Extended Temperature Performance of −40°C to 125°C Enhanced Diminishing Manufacturing Sources (DMS) Support Enhanced Product-Change Notification Qualification Pedigree† ESD Protection Exceeds 2000 V Per MIL-STD-883, Metho

文件：528.04 Kbytes 页数：16 Pages

TI

德州仪器

丝印：HB126EP；Package：TSSOP；QUADRUPLE BUS BUFFER GATES WITH 3-STATE OUTPUTS

Controlled Baseline − One Assembly/Test Site, One Fabrication Site Extended Temperature Performance of −40°C to 125°C Enhanced Diminishing Manufacturing Sources (DMS) Support Enhanced Product-Change Notification Qualification Pedigree† ESD Protection Exceeds 2000 V Per MIL-STD-883, Metho

文件：517.82 Kbytes 页数：15 Pages

TI

德州仪器

丝印：HB125EP；Package：TSSOP；QUADRUPLE BUS BUFFER GATE WITH 3-STATE OUTPUTS

Controlled Baseline − One Assembly/Test Site, One Fabrication Site Extended Temperature Performance of −40°C to 125°C Enhanced Diminishing Manufacturing Sources (DMS) Support Enhanced Product-Change Notification Qualification Pedigree† ESD Protection Exceeds 2000 V Per MIL-STD-883, Metho

文件：528.04 Kbytes 页数：16 Pages

TI

德州仪器

丝印：HB126EP；Package：TSSOP；QUADRUPLE BUS BUFFER GATES WITH 3-STATE OUTPUTS

Controlled Baseline − One Assembly/Test Site, One Fabrication Site Extended Temperature Performance of −40°C to 125°C Enhanced Diminishing Manufacturing Sources (DMS) Support Enhanced Product-Change Notification Qualification Pedigree† ESD Protection Exceeds 2000 V Per MIL-STD-883, Metho

文件：517.82 Kbytes 页数：15 Pages

TI

德州仪器

弹簧式接线端子

Amphenol

安费诺

High Power Mosfet

H-BRIGHT

华晔

弹簧式接线端子

Amphenol

安费诺