1200 V, 350 A, Silicon Carbide, Half-Bridge Module

Technical Features • Industry Standard 62 mm Footprint • Housing CTI ≥ 600 (Material Group I) • Compliant with EN45545-2 R22/23 HL3 • High Humidity Operation THB-80 (HV-H3TRB) • Low Inductance Design Optimized for SiC • Ultra Low Loss, High-Frequency Operation • Normally-off, Fail-safe Devi

文件：3.40182 Mbytes 页数：12 Pages

WOLFSPEED

Gate Driver Boards

Designed for Harsh Environments. Wolfspeed’s BM3 power module platform provides the system benefits of silicon carbide (SiC) while maintaining the robust, industry-standard 62 mm module package. The internal design of Wolfspeed’s 62 mm BM3 package enables high speed silicon carbide switching benefit .css-1d32f0i h1{font-size:4.4rem;font-weight:700;line-height:1.2;margin-bottom:0.425em;}@media (min-width: 768px){.css-1d32f0i h1{font-size:5.4rem;}}.css-1d32f0i h2{font-size:3.6rem;font-weight:700;line-height:1.2;margin-bottom:0.475em;}@media (min-width: 768px){.css-1d32f0i h2{font-size:4rem;}}.css;

Wolfspeed(CREE)

1200 V, 350 A, Silicon Carbide, Half-Bridge Module

Technical Features • Industry Standard 62mm Footprint • High Humidity Operation THB-80 (HV-H3TRB) • Ultra Low Loss, High-Frequency Operation • Zero Reverse Recovery from Diodes • Zero Turn-off Tail Current from MOSFET • Normally-off, Fail-safe Device Operation • Copper Baseplate and Aluminu

文件：3.37411 Mbytes 页数：12 Pages

WOLFSPEED

1200 V, 350 A, Silicon Carbide, Half-Bridge Module

Technical Features • Industry Standard 62mm Footprint • Ultra Low Loss , High-Frequency Operation • Zero Reverse Recovery from Diodes • Zero Turn-off Tail Current from MOSFET • Normally-off, Fail-safe Device Operation • Copper Baseplate and Aluminum Nitride Insulator Applications • Inducti

文件：3.37184 Mbytes 页数：12 Pages

WOLFSPEED