HAL855UT-K数据手册TDK-Micronas中文资料规格书

描述 Description

HAL 85x补充了显有的HAL 8xx霍尔效应传感器系列。产品提供任意输出信号，以亚微CMOS技术生产。和一个旋转或者移动的磁铁配合，产品可用于角度，距离和水平面测量，输出脉宽调制信号或者串行双相M信号。磁场范围、输出特性、输出格式、敏感度、飘移（脉宽调制输出占空比或者串行输出字）、脉宽段区间、高低电流和温度系数等主要特性，可以轻易地通过在非易失性内存中编程来根据磁场调节（线性或者角度）。设置方法是9位32点标定。产品将线性磁场转换为任意输出信号或者将非线性磁场转换为线性输出信号。有小尺寸含铅TO-92UT封装。

特性 Features

·High-precision linear Hall effect sensors with different output formats
·Various programmable magnetic characteristics with non-volatile memory
·Programmable output characteristic (32 setpoints with 9 bit resolution)
·Programmable output formats (PWM or serial Biphase-M)
·Programmable PWM Period
·Open-drain output for HAL 855
·Programmable output current source for HAL 856 (low and high current)
·Digital signal processing
·Temperature characteristics program-mable for matching all common magnetic materials
·Programming by modulation of the supply voltage
·Lock function and built-in redundancy for EEPROM memory
·Operates from –40 °C up to 150 °C ambient temperature
·Operates from 4.5 V up to 18 V supply voltage Operates with static magnetic fields and dynamic magnetic fields up to 2 kHz
·Choppered offset compensation
·Overvoltage protection on all pins
·Reverse-voltage protection on VDD pins
·Magnetic characteristics extremely robust against mechanical stress
·Short-circuit protected output
·EMC-optimized design