HAF2021数据手册批发供应瑞萨RENESAS-114ic电子网

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零件编号	下载&订购	功能描述	制造商&上传企业
HAF2021	文件：92.07 Kbytes Page：9 Pages	Silicon N Channel MOSFET Series Power Switching Description ThisFEThastheovertemperatureshut–downcapabilitysensingtothejunctiontemperature.ThisFEThasthebuilt–inovertemperatureshut–downcircuitinthegatearea.Andthiscircuitoperationtoshut–downthegatevoltageincaseofhighjunctiontemperaturelikeapplyingover	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司
HAF2021-90L	文件：92.07 Kbytes Page：9 Pages	Silicon N Channel MOSFET Series Power Switching Description ThisFEThastheovertemperatureshut–downcapabilitysensingtothejunctiontemperature.ThisFEThasthebuilt–inovertemperatureshut–downcircuitinthegatearea.Andthiscircuitoperationtoshut–downthegatevoltageincaseofhighjunctiontemperaturelikeapplyingover	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司
HAF2021-90S	文件：92.07 Kbytes Page：9 Pages	Silicon N Channel MOSFET Series Power Switching Description ThisFEThastheovertemperatureshut–downcapabilitysensingtothejunctiontemperature.ThisFEThasthebuilt–inovertemperatureshut–downcircuitinthegatearea.Andthiscircuitoperationtoshut–downthegatevoltageincaseofhighjunctiontemperaturelikeapplyingover	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司
HAF2021-90STL	文件：92.07 Kbytes Page：9 Pages	Silicon N Channel MOSFET Series Power Switching Description ThisFEThastheovertemperatureshut–downcapabilitysensingtothejunctiontemperature.ThisFEThasthebuilt–inovertemperatureshut–downcircuitinthegatearea.Andthiscircuitoperationtoshut–downthegatevoltageincaseofhighjunctiontemperaturelikeapplyingover	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司
HAF2021-90STR	文件：92.07 Kbytes Page：9 Pages	Silicon N Channel MOSFET Series Power Switching Description ThisFEThastheovertemperatureshut–downcapabilitysensingtothejunctiontemperature.ThisFEThasthebuilt–inovertemperatureshut–downcircuitinthegatearea.Andthiscircuitoperationtoshut–downthegatevoltageincaseofhighjunctiontemperaturelikeapplyingover	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司
HAF2021L	文件：92.07 Kbytes Page：9 Pages	Silicon N Channel MOSFET Series Power Switching Description ThisFEThastheovertemperatureshut–downcapabilitysensingtothejunctiontemperature.ThisFEThasthebuilt–inovertemperatureshut–downcircuitinthegatearea.Andthiscircuitoperationtoshut–downthegatevoltageincaseofhighjunctiontemperaturelikeapplyingover	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司
HAF2021S	文件：92.07 Kbytes Page：9 Pages	Silicon N Channel MOSFET Series Power Switching Description ThisFEThastheovertemperatureshut–downcapabilitysensingtothejunctiontemperature.ThisFEThasthebuilt–inovertemperatureshut–downcircuitinthegatearea.Andthiscircuitoperationtoshut–downthegatevoltageincaseofhighjunctiontemperaturelikeapplyingover	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司
HAF2021(L)	文件：115.46 Kbytes Page：11 Pages	Silicon N Channel MOS FET Series Power Switching	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司
HAF2021(L)_15	文件：115.46 Kbytes Page：11 Pages	Silicon N Channel MOS FET Series Power Switching	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司
2021	文件：99.66 Kbytes Page：2 Pages	TOKENRINGMAGNETICS	XFMRS XFMRS，Inc.
2021	文件：2.83794 Mbytes Page：5 Pages	N-Channel,20V,0.89A,SmallSignalMOSFET Features zTrenchTechnology zSupperhighdensitycelldesign zExcellentONresistance zExtremelyLowThresholdVoltage zSmallpackageSOT-23/323 Applications zDC-DCconvertercircuit zSmallSignalSwitch zLoadSwitch zLevelShift	TUOFENGShenzhen Tuofeng Semiconductor Technology Co 拓锋半导体深圳市拓锋半导体科技有限公司
2021-XX	文件：32.72 Kbytes Page：2 Pages	FIXEDSIPDELAYLINETR1ns FUNCTIONALDESCRIPTION The2020-and2021-seriesdevicesarefixed,single-input,single-output,passivedelaylines.Thesignalinput(IN)isreproducedattheoutput(OUT),shiftedbyatime(TD)givenbythedevicedashnumber.Thecharacteristicimpedanceofthelinesisnominally50ohms.Th	DATADELAYData Delay Devices, Inc. 数据延迟设备数据延迟设备股份有限公司
ACFM-2021	文件：244.16 Kbytes Page：3 Pages	PCBfootprint	AVAGOAvago 安华高安华高科技
ACTF2021	文件：389.17 Kbytes Page：4 Pages	SAWfilters	ACTAdvanced Crystal Technology 先进的晶体先进的晶体技术
AD2021	文件：793.72 Kbytes Page：4 Pages	LowCost31/2DigitLogicPoweredDPMWithLEDDisplays GENERALDESCRIPTION TheAD2021isalowcost,31/2digit,+5VDClogicpowereddigitalpanelmeterwithlargeLEDdisplays.WhiledesignedforgeneralpurposeDPMapplications,thesmallsize,lightweightandlowpowerconsumptionoftheAD2021makeitanidealdigitalreadoutformodern,compac	INTRONICS Intronics Power, Inc.
ADCS-2021	文件：104.27 Kbytes Page：8 Pages	CMOSImageSensors Description TheADCS-1021andADCS-2021CMOSImageSensorscapturehighquality,lownoiseimageswhileconsumingverylowpower.ThesepartsintegrateahighlysensitiveactivepixelphotodiodearraywithtimingcontrolandonboardA/Dconversion.AvailableineitherVGA(640x480)orCIF(352x28	HPAgilent(Hewlett-Packard) 安捷伦科技安捷伦科技有限公司
AFG2021	文件：472.97 Kbytes Page：8 Pages	Arbitrary/FunctionGenerator	etc2List of Unclassifed Manufacturers etc2未分类制造商
AFG2021	文件：796.77 Kbytes Page：12 Pages	Arbitrary/FunctionGenerator	TEKTRONIXTektronix 泰克泰克科技(中国)有限公司
AN2021	文件：880.3 Kbytes Page：39 Pages	TheST10F272BandST10F272EaremembersoftheSTMicroelectronics	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团
B2021RW	文件：287.29 Kbytes Page：2 Pages	B2000RWSERIES	MPD MPD (Memory Protection Devices)

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详细参数

型号：
HAF2021
制造商：
RENESAS
制造商全称：
Renesas Technology Corp
功能描述：
Silicon N Channel MOSFET Series Power Switching

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市莱克讯科技有限公司	HAF2021-90STR-E	RENESAS	2017+	TO263	23589	深圳代理原装现货进口库存(香港-日本-台湾)开17点增票	询价
深圳市科恒伟业电子有限公司	HAF2021-90STR	RENESAS	1816+	.	6523	科恒伟业!只做原装正品,假一赔十!	询价
深圳市华斯顿科技有限公司	HAF2021-90STR	RENESAS	22+23+	TO263	72658	绝对原装正品现货,全新深圳原装进口现货	询价
深圳市百视威讯电子科技有限公司	HAF2021S		23+	N/A	45880	正品授权货源可靠	询价
深圳市宏捷佳电子科技有限公司	HAF2021S	RENESAS	23+	TO-263	37650	全新原装真实库存含13点增值税票!	询价
深圳兆威电子有限公司	HAF2021-90STR-E	RENESAS	20+	TO263	90000	全新原装正品/库存充足	询价
深圳市仟禧电子有限公司	HAF2021S	RENESAS/瑞萨	22+	SOT-263	20000	保证原装正品,假一陪十	询价
深圳市国宇半导体科技有限公司	HAF2021S	RENESAS/瑞萨	23+	TO-263	10000	公司只做原装正品	询价
深圳市河锋鑫科技有限公司	HAF2021S	RENESAS/瑞萨	22+	TO-263	6000	十年配单,只做原装	询价
贸泽芯城（深圳）电子科技有限公司	HAF2021-90STR	RENESAS/瑞萨	21+ROHS	TO263	10000	原厂授权一级代理,专业海外优势订货,价格优势、品种	询价

更多HAF2021供应商更新时间2024-4-26 17:20:00

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