SILICON N CHANNEL MOS FET SERIES POWER SWITCHING

文件：67.61 Kbytes 页数：10 Pages

HitachiHitachi Semiconductor

日立日立公司

Silicon N Channel MOSFET Series Power Switching

文件：142.99 Kbytes 页数：10 Pages

RENESAS

瑞萨

Silicon N Channel MOS FET Series Power Switching

文件：154.47 Kbytes 页数：12 Pages

RENESAS

瑞萨

Silicon N Channel MOSFET Series Power Switching

文件：142.99 Kbytes 页数：10 Pages

RENESAS

瑞萨

Silicon N Channel MOS FET Series Power Switching

This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over power consumptio • Logic level operation (5 to 6 V Gate drive)\n• High endurance capability against to the short circuit\n• Built-in the over temperature shut-down circuit\n• Temperature hysteresis type.\n• High density mounting.;

Renesas

瑞萨

Package：8-SOIC（0.154"，3.90mm 宽）；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：集成电路（IC） 配电开关，负载驱动器 描述：ABU / MOSFET

Renesas Electronics America Inc