HAF1001数据手册HITACHI中文资料规格书
HAF1001规格书详情
特性 Features
This FET has the over temperature shut–down capability sensing to the junction temperature.
This FET has the built–in over temperature shut–down circuit in the gate area. And this circuit operation to shut–down the gate voltage in case of high junction temperature like applying over power consumption, over current etc.
• Logic level operation (–4 to –6 V Gate drive)
• High endurance capability against to the short circuit
• Built–in the over temperature shut–down circuit
• Latch type shut–down operation (Need 0 voltage recovery)
技术参数
- 型号：
HAF1001
- 制造商：
HITACHI
- 制造商全称：
Hitachi Semiconductor
- 功能描述：
Silicon P Channel MOS FET Series Power Switching/Over Temperature Shut-down Capability
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
RENESAS/瑞萨 |
24+ |
NA/ |
100 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
询价 | ||
RENESAS(瑞萨)/IDT |
24+ |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
询价 | |||
VBsemi |
21+ |
TO220 |
10065 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
VBsemi/台湾微碧 |
21+ |
TO-220AB |
5026 |
原装现货假一赔十 |
询价 | ||
RENESAS/瑞萨 |
23+ |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 | |||
R |
25+ |
TO-TO-220AB |
12300 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
询价 | ||
HIT |
24+ |
TO263 |
90 |
询价 | |||
HIT |
23+ |
TO263 |
7000 |
绝对全新原装!100%保质量特价!请放心订购! |
询价 | ||
HITACHI/日立 |
23+ |
SOT263 |
9800 |
全新原装现货,假一赔十 |
询价 | ||
VBsemi |
24+ |
TO220 |
9000 |
只做原装正品 有挂有货 假一赔十 |
询价 |
