HA1001E高速差分放大器

QianHong

乾鸿微

Silicon P Channel MOS FET Series Power Switching / Over Temperature Shut-down Capability

Features This FET has the over temperature shut–down capability sensing to the junction temperature. This FET has the built–in over temperature shut–down circuit in the gate area. And this circuit operation to shut–down the gate voltage in case of high junction temperature like applying over

文件：53.89 Kbytes 页数：10 Pages

HitachiHitachi Semiconductor

日立日立公司

Silicon P Channel MOS FET Series Power Switching

Description This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying o

文件：88.3 Kbytes 页数：8 Pages

RENESAS

瑞萨

Hi-Reliability RAD Capable Optoisolator

文件：766.45 Kbytes 页数：6 Pages

TTELEC