Dual N-Channel Enhancement-Mode MOSFET (20V, 6A)

Description This N-Channel 2.5V specified MOSFET is a rugged gate version of advanced trench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V-10V) Features • RDS(on)=40mΩ@VGS=2.5V, ID=5.2A; RDS(on)=30mΩ@VGS=4.5V, ID=6A • High Densit

文件：45.67 Kbytes 页数：4 Pages

HSMC

华昕

Dual N-Channel Enhancement-Mode MOSFET (20V, 6A)

Description This N-Channel 2.5V specified MOSFET is a rugged gate version of advanced trench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V-10V) Features • RDS(on)=40mΩ@VGS=2.5V, ID=5.2A; RDS(on)=30mΩ@VGS=4.5V, ID=6A • High Densit

文件：44.8 Kbytes 页数：4 Pages

HSMC

华昕

Dual N-Channel Enhancement-Mode MOSFET (20V, 6A)

HSMC

华昕

Dual N-Channel Enhancement-Mode MOSFET (20V, 6A)

HSMC

华昕