丝印：H75T65W；Package：TO-247；Trench Gate IGBT

Features: • 650V trench gate/field termination process • Very low Vce(sat) • Low switching loss • Positive temperature coefficient in Vce(sat) • Lead Free Applications: • EV Charging • Uninterruptible Power Supply (UPS) • Inverters • Load Switch

文件：732.2 Kbytes 页数：8 Pages

HUIXIN

慧芯电子

650V Field Stop IGBT

General Description This IGBT is produced using advanced Magnachip’s Field Stop Trench IGBT Technology, which provides high performance, excellent quality and high ruggedness. Features  High ruggedness for motor control  VCE(sat) positive temperature coefficient  Very soft, fast recove

文件：781.39 Kbytes 页数：8 Pages

MGCHIP

650V Field Stop IGBT

General Description This IGBT is produced using advanced Magnachip’s Field Stop Trench IGBT Technology, which provides high performance, excellent quality and high ruggedness. Features  High ruggedness for motor control  VCE(sat) positive temperature coefficient  Very soft, fast recove

文件：781.39 Kbytes 页数：8 Pages

MGCHIP

Trench gate Field-Stop IGBT

DESCRIPTION · Low Saturation Voltage:VCE(sat)=2.1V@IC=75A · High Speed Switching · Low Power Loss APPLICATIONS · Industrial Power Supplies · Industrial Drives · Solar Inverters

文件：328.07 Kbytes 页数：2 Pages

ISC

无锡固电

Field Stop Trench IGBT

文件：246.44 Kbytes 页数：9 Pages

ONSEMI

安森美半导体

Field Stop Trench IGBT 650 V, 75 A

文件：340.62 Kbytes 页数：9 Pages

ONSEMI

安森美半导体