丝印：H60R070W；Package：TO-247；Super Junction N-Channel MOSFET

Features: • Fast switching speed • 100% avalanche tested • Improved dv/dt capability • Enhanced Avalanche Ruggedness • Lead Free Applications: • Switch Mode Power Supply(SMPS) • Uninterruptible Power Supply (UPS) • Power Factor Correction (PFC) • AC-DC Switching Power Supply

文件：477.08 Kbytes 页数：7 Pages

HUIXIN

慧芯电子

600V 0.07(ohm) N-channel MOSFET

文件：1.19783 Mbytes 页数：10 Pages

MGCHIP

600V 0.07(ohm) N-channel MOSFET

文件：1.19783 Mbytes 页数：10 Pages

MGCHIP

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 53A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.07Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC c

文件：373.29 Kbytes 页数：2 Pages

ISC

无锡固电