Bipolar Junction Transistor

文件：120.29 Kbytes 页数：3 Pages

JINGDAO

晶导

超高反压系列（Bvceo>600V）

JDsemi

深圳晶导

Silicon Rectifier Schottky Barrier

Description: The NTE6084 is a silicon power rectifier in a DO4 type package designed using the Schottky Barrier principle with a platinum barrier metal. Features: ● Guardring for Stress Protection ● Low Forward Voltage ● +150°C Operating Junction Temperature Capability ● Guaranteed Reverse A

文件：20.76 Kbytes 页数：2 Pages

NTE

PWM Power Control with Automatic Duty-cycle Reduction

Description The U6084B is a PWM-IC with bipolar technology designed for the control of an N-channel power MOSFET used as a high-side switch. The IC is ideal for use in the brightness control (dimming) of lamps such as in dashboard applications. For constant brightness, the preselected duty cycl

文件：183.86 Kbytes 页数：10 Pages

ATMEL

爱特梅尔

PWM Power Control with Automatic Duty Cycle Reduction

Description The U6084B is a bipolar technology PWM-IC designed for the control of an N-channel power MOSFET used as a high-side switch. The IC is ideal for use in the brightness control (dimming) of lamps such as, in dashboard applications. For a constant brightness the preselected duty cycle c

文件：141.36 Kbytes 页数：8 Pages

TEMIC