H603AL中文资料N-Channel Logic Level Enhancement Mode Field Effect Transistor数据手册HSMC规格书

描述 Description

This very high density process has been especially tailored to minimize on state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as DC/DC converters and other battery powered circuits where fast switching, low in line power loss, and resistance to transients are needed.Absolute Maximum Ratings (Ta=25°C)
• Maximum Temperatures
Operating and Storage Temperature................................................................................ -65 ~ +175 °C
• Maximum Power Dissipation
Total Power Dissipation at Tc=25°C ............................................................................................... 60 W
Derate Above 25°C................................................................................................................ 0.4 W / °C
• Maximum Voltages and Currents
Drain-Source Voltage...................................................................................................................... 30 V
Gate-Source Voltage -Continuous................................................................................................ ± 20 V
Drain Current -Continuous .............................................................................................................. 30 A
Drain Current -Pulsed ................................................................................................................... 100 A
Thermal Resistance, Junction-to-Case .................................................................................. 2.5 °C / W
Thermal Resistance, Junction-to-Ambient............................................................................ 62.5 °C / W