首页 >H5TQ2G63GFR-RDC存储IC>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
2GbDDR3SDRAMLead-Free&Halogen-Free(RoHSCompliant) FEATURES •VDD=VDDQ=1.5V+/-0.075V •Fullydifferentialclockinputs(CK,CK)operation •DifferentialDataStrobe(DQS,DQS) •OnchipDLLalignDQ,DQSandDQStransitionwithCK transition •DMmaskswritedata-inatthebothrisingandfalling edgesofthedatastrobe •Alladdresses | HynixHynix Semiconductor 海力士海力士半导体 | Hynix | ||
2GbDDR3SDRAMLead-Free&Halogen-Free(RoHSCompliant) FEATURES •VDD=VDDQ=1.5V+/-0.075V •Fullydifferentialclockinputs(CK,CK)operation •DifferentialDataStrobe(DQS,DQS) •OnchipDLLalignDQ,DQSandDQStransitionwithCK transition •DMmaskswritedata-inatthebothrisingandfalling edgesofthedatastrobe •Alladdresses | HynixHynix Semiconductor 海力士海力士半导体 | Hynix | ||
2GbDDR3SDRAMLead-Free&Halogen-Free(RoHSCompliant) FEATURES •VDD=VDDQ=1.5V+/-0.075V •Fullydifferentialclockinputs(CK,CK)operation •DifferentialDataStrobe(DQS,DQS) •OnchipDLLalignDQ,DQSandDQStransitionwithCK transition •DMmaskswritedata-inatthebothrisingandfalling edgesofthedatastrobe •Alladdresses | HynixHynix Semiconductor 海力士海力士半导体 | Hynix | ||
2GbDDR3SDRAMLead-Free&Halogen-Free(RoHSCompliant) FEATURES •VDD=VDDQ=1.5V+/-0.075V •Fullydifferentialclockinputs(CK,CK)operation •DifferentialDataStrobe(DQS,DQS) •OnchipDLLalignDQ,DQSandDQStransitionwithCK transition •DMmaskswritedata-inatthebothrisingandfalling edgesofthedatastrobe •Alladdresses | HynixHynix Semiconductor 海力士海力士半导体 | Hynix | ||
2GbDDR3SDRAMLead-Free&Halogen-Free(RoHSCompliant) FEATURES •VDD=VDDQ=1.5V+/-0.075V •Fullydifferentialclockinputs(CK,CK)operation •DifferentialDataStrobe(DQS,DQS) •OnchipDLLalignDQ,DQSandDQStransitionwithCK transition •DMmaskswritedata-inatthebothrisingandfalling edgesofthedatastrobe •Alladdresses | HynixHynix Semiconductor 海力士海力士半导体 | Hynix | ||
2GbDDR3SDRAMLead-Free&Halogen-Free(RoHSCompliant) FEATURES •VDD=VDDQ=1.5V+/-0.075V •Fullydifferentialclockinputs(CK,CK)operation •DifferentialDataStrobe(DQS,DQS) •OnchipDLLalignDQ,DQSandDQStransitionwithCK transition •DMmaskswritedata-inatthebothrisingandfalling edgesofthedatastrobe •Alladdresses | HynixHynix Semiconductor 海力士海力士半导体 | Hynix | ||
2GbDDR3SDRAMLead-Free&Halogen-Free(RoHSCompliant) FEATURES •VDD=VDDQ=1.5V+/-0.075V •Fullydifferentialclockinputs(CK,CK)operation •DifferentialDataStrobe(DQS,DQS) •OnchipDLLalignDQ,DQSandDQStransitionwithCK transition •DMmaskswritedata-inatthebothrisingandfalling edgesofthedatastrobe •Alladdresses | HynixHynix Semiconductor 海力士海力士半导体 | Hynix |
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