4Gb DDR3L SDRAM Lead-Free&Halogen-Free (RoHS Compliant)

FEATURES • VDD=VDDQ=1.35V + 0.100 / - 0.067V • Fully differential clock inputs (CK, CK) operation • Differential Data Strobe (DQS, DQS) • On chip DLL align DQ, DQS and DQS transition with CK transition • DM masks write data-in at the both rising and falling edges of the data strobe • All a

文件：472.76 Kbytes 页数：33 Pages

Hynix

海力士

4Gb DDR3L SDRAM Lead-Free&Halogen-Free (RoHS Compliant)

FEATURES • VDD=VDDQ=1.35V + 0.100 / - 0.067V • Fully differential clock inputs (CK, CK) operation • Differential Data Strobe (DQS, DQS) • On chip DLL align DQ, DQS and DQS transition with CK transition • DM masks write data-in at the both rising and falling edges of the data strobe • All a

文件：472.76 Kbytes 页数：33 Pages

Hynix

海力士

4Gb DDR3L SDRAM Lead-Free&Halogen-Free (RoHS Compliant)

FEATURES • VDD=VDDQ=1.35V + 0.100 / - 0.067V • Fully differential clock inputs (CK, CK) operation • Differential Data Strobe (DQS, DQS) • On chip DLL align DQ, DQS and DQS transition with CK transition • DM masks write data-in at the both rising and falling edges of the data strobe • All a

文件：472.76 Kbytes 页数：33 Pages

Hynix

海力士

4Gb DDR3L SDRAM Lead-Free&Halogen-Free (RoHS Compliant)

FEATURES • VDD=VDDQ=1.35V + 0.100 / - 0.067V • Fully differential clock inputs (CK, CK) operation • Differential Data Strobe (DQS, DQS) • On chip DLL align DQ, DQS and DQS transition with CK transition • DM masks write data-in at the both rising and falling edges of the data strobe • All a

文件：472.76 Kbytes 页数：33 Pages

Hynix

海力士